irf6722mpbf International Rectifier Corp., irf6722mpbf Datasheet

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irf6722mpbf

Manufacturer Part Number
irf6722mpbf
Description
Directfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Description
The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6722MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6722MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
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Notes:
www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AS
DS
GS
AS
RoHS Compliant Containing No Lead and Bromide 
Dual Sided Cooling Compatible 
Ideal for CPU Core DC-DC Converters
Optimized for Control FET application
Compatible with existing Surface Mount Techniques 
Low Profile (<0.7 mm)
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Low Conduction and Switching Losses
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
SQ
Fig 1. Typical On-Resistance vs. Gate Voltage
20
15
10
A
A
C
5
0
= 25°C
= 70°C
= 25°C
0
2
SX
V GS, Gate -to -Source Voltage (V)
4
T J = 25°C
6
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
8
10
T J = 125°C
12
Ãg
14
g
Parameter
I D = 13A
16
GS
GS
GS
MQ
18
@ 10V
@ 10V
@ 10V
h
20
f
MX
Typical values (unless otherwise specified)
30V max ±20V max 4.7m:@ 10V 8.0m:@ 4.5V
Q
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
11nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
DSS
measured with thermocouple mounted to top (Drain) of part.
MT
0

J
I D = 11A
4.3nC
= 25°C, L = 1.45mH, R
Q
IRF6722MTRPbF
gd
4
V
DirectFET™ Power MOSFET ‚
GS
MP
Q G , Total Gate Charge (nC)
MP
V DS = 24V
V DS = 15V
IRF6722MPbF
8
1.2nC
Q
gs2
Max.
12
110
±20
30
13
11
56
82
11
R
DS(on)
G
26nC
Q
= 25:, I
16
rr
DirectFET™ ISOMETRIC
TM
20
AS
packaging to achieve
11nC
Q
= 11A.
oss
24
R
DS(on)
Units
V
11/12/07
mJ
1.8V
28
V
A
A
gs(th)
1

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