irf6722m International Rectifier Corp., irf6722m Datasheet

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irf6722m

Manufacturer Part Number
irf6722m
Description
Direct Fetpower Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Description
The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6722MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6722MPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
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www.irf.com
V
V
I
I
I
I
E
I
Absolute Maximum Ratings
D
D
D
DM
AS
DS
GS
AS
RoHS Compliant Containing No Lead and Bromide 
Dual Sided Cooling Compatible 
Ideal for CPU Core DC-DC Converters
Optimized for Control FET application
Compatible with existing Surface Mount Techniques 
Low Profile (<0.7 mm)
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Low Conduction and Switching Losses
100% Rg tested
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
SQ
Fig 1. Typical On-Resistance vs. Gate Voltage
20
15
10
A
A
C
5
0
= 25°C
= 70°C
= 25°C
0
2
SX
V GS, Gate -to -Source Voltage (V)
4
T J = 25°C
6
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
8
10
T J = 125°C
12
Ãg
14
g
Parameter
I D = 13A
16
GS
GS
GS
MQ
18
@ 10V
@ 10V
@ 10V
h
20
f
MX
30V max ±20V max 4.7mΩ@ 10V 8.0mΩ@ 4.5V
Q
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
11nC
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
DSS
measured with thermocouple mounted to top (Drain) of part.
MT
0

J
I D = 11A
4.3nC
= 25°C, L = 1.45mH, R
Q
IRF6722MTRPbF
gd
4
V
DirectFET™ Power MOSFET ‚
GS
MP
Q G , Total Gate Charge (nC)
MP
V DS = 24V
V DS = 15V
IRF6722MPbF
8
1.2nC
Q
gs2
Max.
12
110
±20
30
13
11
56
82
11
R
DS(on)
G
26nC
Q
= 25Ω, I
16
rr
DirectFET™ ISOMETRIC
TM
20
AS
packaging to achieve
11nC
Q
= 11A.
oss
24
R
DS(on)
Units
V
11/12/07
mJ
1.8V
28
V
A
A
gs(th)
1

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irf6722m Summary of contents

Page 1

... The IRF6722MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

... IRF6722MPbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current DSS ...

Page 3

... J τ 1 τ 1 Ci= τi/Ri Ci= τi/Ri 0.001 0.01 0 Rectangular Pulse Duration (sec) Š measured at θ ‰ small clip heatsink (still air) IRF6722MPbF Max. 2.3 1.5 42 270 - 150 Typ. Max. ––– 55 12.5 ––– 20 ––– ––– 3.0 1.0 – ...

Page 4

... IRF6722MPbF 1000 100 10 1 2.5V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 10 1 0.1 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics 10000 0V MHZ C iss = SHORTED ...

Page 5

... Fig 13. Typical Threshold Voltage vs. Junction 350 300 TOP BOTTOM 11A 250 200 150 100 100 Starting Junction Temperature (°C) IRF6722MPbF OPERATION IN THIS AREA LIMITED (on) 100µsec 1msec DC 10msec 25° 150°C Single Pulse 0.01 0.10 1.00 10. Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 50µ ...

Page 6

... IRF6722MPbF DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time Test Circuit 6 Id Vgs L VCC Fig 15b. Gate Charge Waveform 15V DRIVER ...

Page 7

... Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G + Voltage Body Diode - Inductor Curent Ripple ≤ 5% for HEXFET G = GATE D= DRAIN S = SOURCE IRF6722MPbF P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Forward Drop I SD ® Power MOSFETs ...

Page 8

... IRF6722MPbF ™ DirectFET™ Part Marking 8 DIMENSIONS METRIC MAX CODE MIN MAX A 6.25 6.35 0.246 B 4.80 5.05 1.889 C 0.152 3.85 3.95 0.014 D 0.35 0.45 E 0.62 0.023 0.58 F 0.58 0.62 0.023 G 0.030 0.75 0.79 0.021 H 0.53 0.57 J 0.67 0.025 0.63 K 1.59 1.72 0.063 L 0.113 2.87 3.04 0.0235 M 0.616 0.676 R 0.080 0.0008 0.020 P 0.08 0.17 0.003 GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates " ...

Page 9

... DIMENSIONS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6722MTRPBF). For 1000 parts on 7" reel, order IRF6722MTR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

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