irf710b Fairchild Semiconductor, irf710b Datasheet

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irf710b

Manufacturer Part Number
irf710b
Description
400v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
IRF710B/IRFS710B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF Series
TO-220
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25° C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 2.0A, 400V, R
• Low gate charge ( typical 7.7 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
IRFS Series
TO-220F
IRF710B
IRF710B
0.29
3.44
62.5
DS(on)
2.0
1.3
6.0
0.5
36
-55 to +150
= 3.4
400
100
300
2.0
3.6
5.5
30
@V
G
IRFS710B
IRFS710B
2.0 *
1.3 *
6.0 *
0.19
5.37
62.5
GS
23
--
= 10 V
November 2001
D
S
Rev. A, November 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
A
A
A
V
A
V

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irf710b Summary of contents

Page 1

... C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° Parameter November 2001 = 3 DS(on IRF710B IRFS710B Units 400 V 2.0 2 1.3 1 6.0 6 100 mJ 2.0 A 3.6 mJ 5.5 V/ 0.29 0.19 W/°C -55 to +150 °C 300 °C IRF710B IRFS710B Units 3.44 5.37 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, November 2001 ...

Page 2

... V = 50V 2.0A, di/dt  300A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... Drain Current and Gate Voltage 500 400 C iss 300 200 C oss 100 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation Notes : 1. 250 s Pulse Test 25 Figure 2. Transfer Characteristics = 10V Note : ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for IRF710B 2.0 1.6 1.2 0.8 0.4 0 Case Temperature [  ] T C Figure 10. Maximum Drain Current vs Case Temperature ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0  Notes : 250  A 0 ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for IRF710B Figure 11-2. Transient Thermal Response Curve for IRFS710B © ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 8

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2001 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, November 2001 ...

Page 9

... Package Dimensions (Continued) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2001 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, November 2001 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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