irf7509pbf

Manufacturer Part Numberirf7509pbf
DescriptionHexfet Power Mosfet
ManufacturerInternational Rectifier Corp.
irf7509pbf datasheet
 


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Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Very Small SOIC Package
l
Low Profile (<1.1mm)
l
Available in Tape & Reel
l
Fast Switching
l
Lead-Free
l
Description
Fifth
Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
V
Gate-to-Source Voltage Single Pulse tp<10µS
GSM
dv/dt
Peak Diode Recovery dv/dt
T
, T
Junction and Storage Temperature Range
J
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
θJA
www.irf.com
HEXFET
N-CHANNEL MOSFET
1
8
S1
2
7
G1
3
6
S2
4
5
G2
P-CHANNEL MOSFET
Top View
N-Channel
30
2.7
GS
2.1
GS

21
®
Power MOSFET
N-Ch
P-Ch
D1
D1
DSS
D2
D2
DS(on)
Micro8
Max.
Units
P-Channel
-30
V
-2.0
-1.6
A
-16
1.25
W
0.8
W
10
mW/°C
± 20
V
30
V
5.0
V/ns
-55 to + 150
°C
240 (1.6mm from case)
Max.
Units
100
°C/W
1

irf7509pbf Summary of contents

  • Page 1

    Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free l Description Fifth Generation HEXFETs from ...

  • Page 2

    J DS(ON) GS(th) fs DSS GSS d(on) r d(off) f iss oss rss Notes:  ‚ ≤ ≤ N-Channel I SD ≤ ≤ P-Channel ...

  • Page 3

    VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 3.0V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = 25°C ...

  • Page 4

    ID = 2.7A 0.100 0.080 0.060 Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate Voltage 400 1MHz ...

  • Page 5

    VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 1 -3.0V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 11. ...

  • Page 6

    Gate to Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage 400 1MHz ...

  • Page 7

    Micro8 Package Outline Dimensions are shown in milimeters (inches 0.08 (.003) ...

  • Page 8

    Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...