irf7509pbf International Rectifier Corp., irf7509pbf Datasheet

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irf7509pbf

Manufacturer Part Number
irf7509pbf
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
1.IRF7509PBF.pdf (8 pages)
l
l
l
l
l
l
l
l
Description
Fifth
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Thermal Resistance
www.irf.com
R
V
I
I
I
P
P
V
V
dv/dt
T
D
D
DM
DS
J
D
D
GS
GSM
θJA
@ T
@ T
, T
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
@T
@T
STG
A
A
Generation HEXFETs from International Rectifier utilize advanced
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Maximum Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10µS
Gate-to-Source Voltage
Parameter
Parameter

GS
GS
„
„
‚
„
G2
G1
S2
S1
N-CHANNEL MOSFET
1
2
3
P-CHANNEL MOSFET
4
Top View
N-Channel
2.7
2.1
30
21
8
6
5
7
HEXFET
240 (1.6mm from case)
D1
D1
D2
D2
-55 to + 150
Max.
100
Max.
± 20
1.25
10
0.8
5.0
30
®
DS(on)
DSS
P-Channel
Power MOSFET
-30
-2.0
-1.6
-16
Micro8
N-Ch
Ω
mW/°C
Units
Units
P-Ch
°C/W
V/ns
V
V
°C
V
W
W
A
1
Ω

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irf7509pbf Summary of contents

Page 1

Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free l Description Fifth Generation HEXFETs from ...

Page 2

J DS(ON) GS(th) fs DSS GSS d(on) r d(off) f iss oss rss Notes:  ‚ ≤ ≤ N-Channel I SD ≤ ≤ P-Channel ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 3.0V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = 25°C ...

Page 4

ID = 2.7A 0.100 0.080 0.060 Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate Voltage 400 1MHz ...

Page 5

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 1 -3.0V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 11. ...

Page 6

Gate to Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage 400 1MHz ...

Page 7

Micro8 Package Outline Dimensions are shown in milimeters (inches 0.08 (.003) ...

Page 8

Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES : ...

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