irf7769l2pbf International Rectifier Corp., irf7769l2pbf Datasheet

irf7769l2pbf

Manufacturer Part Number

irf7769l2pbf

Description

Directfet Power Mosfet

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF7769L2PBF.pdf (11 pages)

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‚

Applicable DirectFET Outline and Substrate Outline

Description

The IRF7769L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

achieve the lowest on-state resistance in a package that has a footprint smaller than a D

is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package

allows dual sided cooling to maximize thermal transfer in power systems.

The IRF7769L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses

in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system

reliability improvements, and makes this device ideal for high performance power converters.

www.irf.com

Absolute Maxim um Ratings

Primary Switch Socket

RoHS Compliant, Halogen Free

Lead-Free (Qualified up to 260°C Reflow)

Ideal for High Performance Isolated Converter

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

Industrial Qualified

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

12.00

10.00

8.00

6.00

4.00

2.00

0.00

= 25°C

= 100°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

2.0

4.0

V GS , Gate-to-Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

6.0

8.0

10.0 12.0 14.0 16.0

T J = 125°C

T J = 25°C

I D = 74A

Parameter

@ 10V

(Silicon Limited)

(Package Limited)

„

…

†

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

measured with thermocouple mounted to top (Drain) of part.

3.10

3.00

2.90

2.80

= 25°C, L = 0.09mH, R

Fig 2. Typical On-Resistance vs. Drain Current

PAK and only 0.7 mm profile. The DirectFET package

T A = 25°C

100V min ±20V max

DirectFET™ Power MOSFET ‚

200nC

g tot

DSS

IRF7769L2TR1PbF

I D , Drain Current (A)

IRF7769L2TRPbF

Max.

100

124

375

500

260

±20

110nC

= 25Ω, I

V GS = 7.0V

V GS = 10V

V GS = 15V

V GS = 8.0V

DirectFET™ ISOMETRIC

= 74A.

2.8mΩ@ 10V

PD -

2.7V

packaging to

DS(on)

gs(th)

97413B

Units

100

2/2/2010

Related parts for irf7769l2pbf

irf7769l2pbf Summary of contents

Page 1

RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D C Power Dissipation 100° Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH 3. 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 25V ≤ 60µs PULSE WIDTH 100 10 1 0.1 2.0 ...

Page 5

175° 25° -40°C 1 0.1 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 125 100 ...

Page 6

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 280 TOP Single ...

Page 7

D DUT 20K Fig 18a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 19a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 20a. ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations GATE D = DRAIN S = SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET™ Part Marking Note: For the most current drawing please refer to IR website at www.irf.com DIMENSIONS METRIC IMPERIAL CODE MAX MIN MIN MAX 9.15 0.356 ...

Page 10

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: CONTROLLING DIMENSIONS NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. (ordered as IRF7769L2PBF). REEL DIMENSIONS STANDARD OPTION (QTY 4000) METRIC IMPERIAL CODE MIN MAX MIN MAX A 12.992 330.0 N.C N.C B 0.795 20.2 N.C N.C C 0.504 12 ...

Page 11

Part number Package Type IRF7769L2TRPbF DirectFET2 Large Can IRF7769L2TR1PbF DirectFET2 Large Can † Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be ...

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