irf7707gpbf International Rectifier Corp., irf7707gpbf Datasheet
irf7707gpbf
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irf7707gpbf Summary of contents
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... Maximum Power Dissipation D A Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com IRF7707GPbF HEXFET V DSS -20V 9 ! " B Ã2Ã9 !Ã2ÃT "Ã2ÃT Ã2ÃB @ -4. -4.5V GS ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 150 ° 20µs ...
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1MHz iss rss 2800 oss iss 2100 1400 C oss 700 C rss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...
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-7.0A 0.000 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge ...
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DI9@Y 6SF $ r 7 "Y ppp r 'YÃ iii hhh 8 'ÃTVSA G@69Ã6TTDB BG@ ! & ...
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G@) UCDTÃDTÃ6IÃDSA''$! 7A GPUÃ8P9@ TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'À€ Note: For the most current drawing please refer to IR website at IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 6SUÃIVH7@S ...