tc1201 Transcom, Inc., tc1201 Datasheet

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tc1201

Manufacturer Part Number
tc1201
Description
Low Noise And Medium Power Gaas Fets
Manufacturer
Transcom, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC1201
Manufacturer:
Transcom
Quantity:
5 000
Part Number:
tc1201V
Manufacturer:
RFMD
Quantity:
5 000
FEATURES
! Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
! High Associated Gain: Ga = 12 dB Typical at 12 GHz
! High Dynamic Range: 1 dB Compression Power P
! Breakdown Voltage: BV
! Lg = 0.25 m, Wg = 300 m
! All-Gold Metallization for High Reliability
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
Note: * For the tight control of the pinch-off voltage . TC1201’s are divided into 3 groups:
TRANSCOM, INC.,
Web-Site:
The TC1201 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low
noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and
suitable for low noise and medium power amplifier applications including a wide range of commercial and
military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated
for either thermo-compression or thermo-sonic wire bonding.
(1) TC1201P0710 : Vp = -0.7V to -1.0V (2) TC1201P0811 : Vp = -0.8V to -1.1V (3) TC1201P0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
Symbol
BV
P
I
NF
G
V
R
G
g
DSS
1dB
m
DGO
th
a
L
P
www.transcominc.com.tw
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point , f = 12GHz V
Linear Power Gain, f = 12GHz V
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
90 Dasoong 7
DS
DGO
= 4 V, I
Low Noise and Medium Power GaAs FETs
DS
DS
DS
= 4 V, I
th
= 2 V, I
= 2 V, V
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
9 V
DS
= 25 mA
DS
D
= 25 mA, f = 12GHz
GS
= 0.6 mA
DS
DGO
= 0 V
DS
= 6 V, I
Conditions
,
= 2 V, V
=0.15 mA
f = 12GHz
Phone: 886-6-5050086
A
=25 C)
DS
= 40 mA
GS
= 0 V
-1
= 21.5 dBm at 12 GHz
1 / 6
DS
= 6 V, I
DS
= 40 mA
Fax: 886-6-5051602
PHOTO ENLARGEMENT
MIN
20.5
10
11
9
-1.0*
TYP
21.5
100
120
0.5
12
12
90
12
REV5_20070502
TC1201
MAX
0.7
UNIT
Volts
Volts
dBm
mA
C/W
mS
dB
dB
dB

Related parts for tc1201

tc1201 Summary of contents

Page 1

... DGO R Thermal Resistance th Note: * For the tight control of the pinch-off voltage . TC1201’s are divided into 3 groups: (1) TC1201P0710 : Vp = -0.7V to -1.0V (2) TC1201P0811 : Vp = -0.8V to -1.1V (3) TC1201P0912 : Vp = -0.9V to -1.2V In addition, the customers may specify their requirements. TRANSCOM, INC Dasoong 7 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. ...

Page 2

... +175 430 ± ± ± ± Gate Pad Drain Pad Source Pad Phone: 886-6-5050086 TC1201 REV5_20070502 = Γ opt A opt (dB) (dB) MAG ANG 0.33 20.4 0.89 9 0.41 17.0 ...

Page 3

... Phone: 886-6-5050086 TC1201 REV5_20070502 = Swp Max 18 GHz S12 Swp Min 2 GHz Swp Max 18GHz S22 Swp Min S12 S22 ANG MAG ANG 66.80 0.5775 -25 ...

Page 4

... Phone: 886-6-5050086 TC1201 REV5_20070502 = Swp Max 18 GHz S12 Swp Min 2 GHz Swp Max 18GHz S22 Swp Min S12 S22 ANG MAG ANG 65.82 0.5814 -23 ...

Page 5

... DS DS PARAMETERS Cgs Rds Ri Cgd PARAMETERS Cgs Rds Ri Cgd Gm T Phone: 886-6-5050086 TC1201 REV5_20070502 Rs 0.028 nH 1.63 Ohm Ls 2.21 Ohm 0.0005 nH Cds 0.425 pF 0.104 pF Rds 5.95 Ohm 172.8 Ohm Rd 0.039 pF 0.898 Ohm Ld 123.1 mS 0.024 nH 4 ...

Page 6

... VTO ALPHA BETA Ld Rd GAMMA DELTA Rdb Q NG Cbs ND TAU VBI VDELTA Phone: 886-6-5050086 TC1201 REV5_20070502 Parameters VMAX -0.757 V 0.5 V CGD 3.92 0.032 pF CGS 0.161 1.7929 pF CDS 0.0509 0.097 pF RIS 0.3815 7.121 Ohm RID 0.987 0.001 Ohm VBR ...

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