tc1304v Transcom, Inc., tc1304v Datasheet
tc1304v
Manufacturer Part Number
tc1304v
Description
Low Noise And Medium Power Gaas Fets
Manufacturer
Transcom, Inc.
Datasheet
1.TC1304V.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC1304V
Manufacturer:
Transcom
Quantity:
5 000
FEATURES
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DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
Note: * For the tight control of the pinch-off voltage . TC1304V’s are divided into 3 groups:
TRANSCOM, INC.,
Web-Site:
The TC1304V is the same as TC1304 expect via holes in the source pads for reducing the grounding inductance.
The device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and
suitable for low noise and medium power amplifier applications including a wide range of commercial and
military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated
for either thermo-compression or thermo-sonic wire bonding.
Symbol
(1) TC1304VP0710 : Vp = -0.7V to -1.0V (2) TC1304VP0811 : Vp = -0.8V to -1.1V
(3) TC1304VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
BV
P
I
NF
R
G
V
G
DSS
g
1dB
m
DGO
th
L
a
P
Via holes for source grounding
Low Noise Figure: NF = 0.8dB Typical at 12 GHz
High Associated Gain: Ga = 13 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P
Breakdown Voltage: BV
Lg = 0.25 m, Wg = 600 m
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
www.transcominc.com.tw
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point, f = 12GHz V
Linear Power Gain, f = 12GHz,V
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
90 Dasoong 7
DS
= 4 V, I
DS
DS
DS
Low Noise and Medium Power GaAs FETs
= 4 V, I
DGO
= 2 V, I
= 2 V, V
th
DS
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
= 50 mA, f = 12GHz
DS
9 V
D
= 50 mA, f = 12GHz
GS
= 1.2 mA
DS
DGO
= 0 V
DS
= 6 V, I
Conditions
= 2 V, V
= 0.3 mA
Phone: 886-6-5050086
A
=25 C)
DS
= 80 mA
GS
= 0 V
1 / 2
-1
= 24.5 dBm at 12 GHz
DS
= 6 V, I
DS
= 80 mA
Fax: 886-6-5051602
PHOTO ENLARGEMENT
MIN
23.5
11
9
9
-1.0*
TYP
24.5
180
200
0.8
13
10
12
48
TC1304V
REV5_20070502
MAX
1.0
UNIT
dBm
Volts
Volts
mA
C/W
mS
dB
dB
dB
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tc1304v Summary of contents
Page 1
... DC Tested DESCRIPTION The TC1304V is the same as TC1304 expect via holes in the source pads for reducing the grounding inductance. The device is processed with via-holes for high gain applications. It can be used in circuits GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications ...
Page 2
... Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw = Rating 7 DSS 600 A 24 dBm 800 mW 175 +175 340 Phone: 886-6-5050086 TC1304V REV5_20070502 Units: Micrometers Chip Thickness: 50 Gate Pad Drain Pad Source Pad Fax: 886-6-5051602 ...