tc1301vp0912 Transcom, Inc., tc1301vp0912 Datasheet

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tc1301vp0912

Manufacturer Part Number
tc1301vp0912
Description
Low Noise And Medium Power Gaas Fets
Manufacturer
Transcom, Inc.
Datasheet
FEATURES
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DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
Note: * For the tight control of the pinch-off voltage . TC1301V’s are divided into 3 groups:
TRANSCOM, INC.,
Web-Site:
The TC1301V is the same as TC1301 expect via holes in the source pads for reducing the grounding inductance.
The device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and
suitable for low noise and medium power amplifier application including a wide range of commercial and military
application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding.
Symbol
(1) TC1301VP0710 : Vp = -0.7V to -1.0V (2) TC1301VP0811 : Vp = -0.8V to -1.1V
(3) TC1301VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
BV
P
I
NF
R
G
V
G
DSS
g
1dB
m
DGO
th
L
a
P
Via hole for source grouding
Low Noise Figure: NF = 0.8dB Typical at 12 GHz
High Associated Gain: Ga = 12 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P
dBm at 12 GHz
Breakdown Voltage: BV
Lg = 0.25 m, Wg = 600 m
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
www.transcominc.com.tw
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point, f = 12GHz,V
Linear Power Gain, f = 12GHz,V
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
90 Dasoong 7
DS
= 4 V, I
DS
DS
DS
Low Noise and Medium Power GaAs FETs
= 4 V, I
DGO
= 2 V, I
= 2 V, V
th
DS
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
= 50 Ma, f = 12GHz
DS
9 V
D
= 50 mA, f = 12GHz
GS
= 1.2 mA
DS
DGO
= 0 V
DS
= 6 V, I
Conditions
= 2 V, V
=0.3mA
Phone: 886-6-5050086
A
=25 C)
DS
= 80 mA
GS
= 0 V
1 / 2
-1
= 24.5
DS
= 6 V, I
DS
= 80 mA
Fax: 886-6-5051602
PHOTO ENLARGEMENT
MIN
23.5
10
9
9
-1.0*
TYP
24.5
180
200
0.8
12
10
12
48
TC1301V
REV5_20070502
MAX
1.0
UNIT
dBm
Volts
Volts
mA
C/W
mS
dB
dB
dB

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tc1301vp0912 Summary of contents

Page 1

... R Thermal Resistance th Note: * For the tight control of the pinch-off voltage . TC1301V’s are divided into 3 groups: (1) TC1301VP0710 : Vp = -0.7V to -1.0V (2) TC1301VP0811 : Vp = -0.8V to -1.1V (3) TC1301VP0912 : Vp = -0.9V to -1.2V In addition, the customers may specify their requirements. th TRANSCOM, INC., 90 Dasoong 7 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. ...

Page 2

... HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must less than 300V. th TRANSCOM, INC., 90 Dasoong 7 Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www ...

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