tisp4265h4bj Bourns, Inc., tisp4265h4bj Datasheet
tisp4265h4bj
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tisp4265h4bj Summary of contents
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ Copyright © 1999, Power Innovations Limited, UK HIGH HOLDING CURRENT 100 A 10/1000 OVERVOLTAGE PROTECTORS 8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating High Holding Current . . . . . . . . . 225 mA min. Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 absolute maximum ratings Repetitive peak off-state voltage, (see Note 1) Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 10/160 µ ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ electrical characteristics for the T and R terminals, T PARAMETER Repetitive peak off ±V DRM D DRM state current V Breakover voltage dv/dt = ±750 V/ms, R (BO) dv/dt ±1000 V/µs, Linear voltage ramp, Impulse breakover Maximum ramp value = ±500 V V (BO) voltage di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ± ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 PARAMETER MEASUREMENT INFORMATION V DRM -v I DRM I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 V = ± 0·1 0·01 0·001 - Junction Temperature - ° Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE 200 150 ° 100 µs 100 ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 NORMALISED CAPACITANCE vs OFF-STATE VOLTAGE 1 0.9 0.8 0.7 0.6 '4165 THRU '4200 0.5 '4265 THRU '4360 0.4 0.3 0.2 0 Off-state Voltage - V D Figure ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ RATING AND THERMAL INFORMATION NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 600 Vrms, 50/60 Hz GEN R = 1.4 GEN GEN EIA/JESD51-2 ENVIRONMENT 15 EIA/JESD51-3 PCB ° 1.5 0· Current Duration - s Figure 8. V DERATING FACTOR ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 deployment These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12 multiples to limit the voltage at several points in a circuit (Figure 13). ...
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... V of clipping is normally possible without activating the ring trip circuit. Figure 10 allows the calculation of the protector V value should not be less than the maximum normal system voltages. The TISP4265H4BJ, with a V 200 V, can be used for the protection of ring generators producing 100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17) ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 typical circuits RING FUSE RING DETECTOR TISP4360H4 TIP Figure 14. MODEM INTER-WIRE PROTECTION OVER- RING/TEST CURRENT PROTECTION PROTECTION TIP WIRE R1a Th1 R1b RING WIRE Figure 17. LINE CARD RING/TEST PROTECTION ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ SMBJ (DO-214AA) plastic surface mount diode package This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 recommended printed wiring footprint. SMB Pad Size 2.40 device symbolization code Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified. carrier information Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in the most practical carrier ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ tape dimensions SMB Package Single-Sprocket Tape 4,10 3,90 2,05 1,95 8,10 7,90 Direction of Feed NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the component cannot rotate more than 20° within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:- Reel diameter: 330 ± ...
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... TISP4165H4BJ THRU TISP4200H4BJ, TISP4265H4BJ THRU TISP4360H4BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED MARCH 1999 Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current ...