ss8550w Galaxy Semi-Conductor Holdings Limited, ss8550w Datasheet
ss8550w
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... BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES Collector Current.(I = 1.5AÊ C Complementary To SS8550W. Collector Dissipation: P =0. APPLICATIONS High Collector Current. ORDERING INFORMATION Type No. SS8550W MAXIMUM RATING @ Ta=25W unless otherwise specified Symbol Parameter Collector-Base Voltage V CBO Collector-Emitter Voltage V CEO Emitter-Base Voltage V EBO Collector Current -Continuous ...
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... CE(sat) I =-800mA -80mA BE(sat) V =-10V -50mA f=30MHz V =-10V,I =0,f=1MHz =-1. BEF FE( 120-200 200-350 Production specification SS8550W MIN TYP MAX UNIT - -0.1 A -0.1 A -0.1 A 120 400 40 -0.5 V -1.2 V 100 MHz 300-400 www.galaxycn.com 2 ...
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... BL Galaxy Electrical Silicon Epitaxial Planar Transistor TYPICAL CHARACTERISTICS Document number: BL/SSSTF062 Rev.A Production specification @ Ta=25W unless otherwise specified SS8550W www.galaxycn.com 3 ...
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... Galaxy Electrical Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package PACKAGE INFORMATION Device Package SS8550W SOT-323 3000/Tape&Reel Document number: BL/SSSTF062 Rev.A Dim All Dimensions in mm Shipping Production specification SS8550W SOT-323 SOT-323 Min Max 1.8 2.2 1.15 1.35 1.0Typical 0.15 0.35 0.25 0.40 1.2 1.4 0.02 0.1 0.1Typical 2.1 2.3 www.galaxycn.com 4 ...