mmdf2p03hd ON Semiconductor, mmdf2p03hd Datasheet

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mmdf2p03hd

Manufacturer Part Number
mmdf2p03hd
Description
Power Mosfet 2 Amps, 30 Volts
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mmdf2p03hdR2G
Manufacturer:
ON/安森美
Quantity:
20 000
MMDF2P03HD
Power MOSFET
2 Amps, 30 Volts
P−Channel SO−8, Dual
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided)
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 8
MAXIMUM RATINGS
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T
Drain Current
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance − Junction to Ambient
Maximum Lead Temperature for Soldering
These miniature surface mount MOSFETs feature ultra low R
Life
Ultra Low R
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO−8 Surface Mount Package − Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
Avalanche Energy Specified
Mounting Information for SO−8 Package Provided
with one die operating, 10 sec. max.
DSS
Energy − Starting T
(V
I
(Note 2.)
Purposes, 1/8″ from case for 10 seconds
L
DD
= 6.0 Apk, L = 18 mH, R
Specified at Elevated Temperature
= 30 Vdc, V
− Continuous @ T
− Single Pulse (t
DS(on)
Rating
GS
J
Provides Higher Efficiency and Extends Battery
= 5.0 Vdc, Peak
= 25°C
(T
J
GS
= 25°C unless otherwise noted) (Note 1.)
C
Preferred Device
G
= 1.0 MΩ)
= 25°C (Note 2.)
p
= 25 Ω)
A
A
≤ 10 μs)
= 25°C
= 100°C
Symbol
T
V
V
R
J
V
E
I
P
DGR
, T
T
DSS
I
I
DM
θJA
GS
D
D
AS
D
L
stg
to 150
Value
± 20
− 55
62.5
324
260
3.0
1.9
2.0
30
30
15
1
Watts
DS(on)
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
Preferred devices are recommended choices for future use
and best overall value.
MMDF2P03HDR2
8
Device
Source−1
Source−2
Gate−1
Gate−2
ORDERING INFORMATION
1
R
G
L
Y
WW
DS(on)
http://onsemi.com
PIN ASSIGNMENT
2 AMPERES
30 VOLTS
SO−8, Dual
CASE 751
STYLE 11
P−Channel
= Location Code
= Year
= Work Week
Package
Top View
SO−8
D
1
2
3
4
= 200 mW
Publication Order Number:
S
8
7
6
5
2500 Tape & Reel
MMDF2P03HD/D
Drain−1
Drain−1
Drain−2
Drain−2
Shipping
MARKING
DIAGRAM
D2P03
LYWW

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mmdf2p03hd Summary of contents

Page 1

... LYWW STYLE Location Code Y = Year WW = Work Week PIN ASSIGNMENT Drain− Gate− Drain− Drain−2 Gate− Drain−2 Top View ORDERING INFORMATION Package Shipping SO−8 2500 Tape & Reel Publication Order Number: MMDF2P03HD/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc 250 μAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 4.5 V 3 3 3 2 0.2 0.4 0.6 0 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Δt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E− Figure 15. Diode Reverse Recovery Waveform Normalized to θja at 10s. Chip 0.0175 Ω 0.0710 Ω 0.0154 ...

Page 8

INFORMATION FOR USING THE SO−8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure ...

Page 9

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings ...

Page 10

... N 0.25 0.50 0.010 0.020 S 5.80 6.20 0.228 0.244 STYLE 11: PIN 1. SOURCE 1 2. GATE 1 XXXXXX 3. SOURCE 2 4. GATE 2 ALYW 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMDF2P03HD/D _ ...

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