ftp10n40 ARK Microelectronics Co., Ltd., ftp10n40 Datasheet - Page 2

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ftp10n40

Manufacturer Part Number
ftp10n40
Description
400v N-channel Mosfet
Manufacturer
ARK Microelectronics Co., Ltd.
Datasheet
Electrical Characteristics
OFF Characteristics
BV
△BV
I
I
ON Characteristics
R
V
gfs
Dynamic Characteristics
ARK Microelectronics Co., Ltd.
Symbol
Symbol
Symbol
DSS
GSS
Resistive Switching Characteristics
t
DS(ON)
t
GS(TH)
d(OFF)
C
C
d(ON)
C
Q
Q
t
t
Q
rise
DSS
fall
Symbol
OSS
RSS
ISS
GD
GS
G
DSS
/△T
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
J
Drain-to-Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Parameter
Parameter
Parameter
Parameter
www.ark-micro.com
Min.
Min.
Min.
Min.
2/11
400
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ.
Typ.
Typ.
1138
Typ.
10.5
12.4
0.43
119
0.6
24
34
31
91
44
55
--
--
3
--
--
--
--
Essentially independent of operating temperature
Essentially independent of operating temperature
Max.
Max.
Max.
Max.
-100
0.50
100
100
4.0
12
--
--
--
--
--
--
--
--
--
--
--
--
--
FTP10N40/FTA10N40
V/℃
Unit
Unit
Unit
Unit
µA
nA
nC
pF
ns
V
V
T
T
S
C
C
=25℃ unless otherwise specified
=25℃ unless otherwise specified
V
V
V
V
V
V
Reference to 25℃,
DS
DS
GS
DS
DS
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Rev. 2.0 Mar. 2009
GS
=320V, V
=10V, I
= V
=400V, V
=0V, I
=15V, I
V
V
V
I
T
V
f=1.0MH
V
V
Figure 14
Figure 15
V
D
R
I
I
GS
DD
DD
C
GS
=250µA
GS
DS
D
D
GS
GS
G
=125℃
=10A
=10A
=+30V
=20Ω
=-30V
=200V
=200V
=0V
=25V
=10V
, I
D
D
D
=250µA
D
=6.0A
=250µA
=10A
GS
GS
Z
=0V,
=0V
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[4]

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