SST37VF010 Silicon Storage Technology, Inc., SST37VF010 Datasheet

SST37VF010

Manufacturer Part Number

SST37VF010

Description

1 Mbit / 2 Mbit / 4 Mbit X8 Many-time Programmable Flash Sst37vf010 / Sst37vf020 / Sst37vf040

Manufacturer

Silicon Storage Technology, Inc.

Datasheet

1.SST37VF010.pdf (18 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST37VF010

Manufacturer:

PANASONIC

Quantity:

1 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST37VF010-70-3C-NH

Manufacturer:

SST

Quantity:

879

Company:

Meier Automation Equipment Co., Limited

Part Number:

SST37VF010-70-3C-NH

Manufacturer:

SST

Quantity:

20 000

Company:

Allchip Electronic(HK) Limited

Part Number:

SST37VF010-70-3C-NHE

Manufacturer:

SST

Quantity:

18 928

Company:

H&T Electronics

Part Number:

SST37VF010-70-3C-NHE

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST37VF010-70-3C-WH

Quantity:

100

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST37VF010-70-3C-WHE

Quantity:

2 025

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SST37VF010-70-4C-WH

Quantity:

110

Company:

Allchip Electronic(HK) Limited

Part Number:

SST37VF010-90-3C-NH

Manufacturer:

SST

Quantity:

16 362

Current page: 1 of 18
Download datasheet (368Kb)

FEATURES:

• Organized as 128K x8 / 256K x8 / 512K x8

• 2.7-3.6V Read Operation

• Superior Reliability

• Low Power Consumption:

• Fast Read Access Time:

• Latched Address and Data

PRODUCT DESCRIPTION

The SST37VF010/020/040 devices are 128K x8 / 256K x8

/ 512K x8 CMOS, Many-Time Programmable (MTP), low

cost flash, manufactured with SST’s proprietary, high per-

formance CMOS SuperFlash technology. The split-gate

cell design and thick-oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST37VF010/020/040 can be electrically

erased and programmed at least 1000 times using an

external programmer, e.g., to change the contents of

devices in inventory. The SST37VF010/020/040 have to be

erased prior to programming. These devices conform to

JEDEC standard pinouts for byte-wide flash memories.

Featuring

SST37VF010/020/040 provide a typical Byte-Program time

of 15 µs. Designed, manufactured, and tested for a wide

spectrum of applications, these devices are offered with an

endurance of at least 1000 cycles. Data retention is rated at

greater than 100 years.

The SST37VF010/020/040 are suited for applications that

require infrequent writes and low power nonvolatile stor-

age. These devices will improve flexibility, efficiency, and

performance while matching the low cost in nonvolatile

applications that currently use UV-EPROMs, OTPs, and

mask ROMs.

S71151-10-000

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

– Active Current: 10 mA (typical)

– Standby Current: 2 µA (typical)

– 70 ns

high

SST37VF512 / 010 / 020 / 0402.7V-Read 512Kb / 1Mb / 2Mb / 4Mb (x8) MTP flash memories

performance

5/08

Many-Time Programmable Flash

SST37VF010 / SST37VF020 / SST37VF040

1 Mbit / 2 Mbit / 4 Mbit (x8)

Byte-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Byte-Program Operation:

• Electrical Erase Using Programmer

• CMOS I/O Compatibility

• JEDEC Standard Byte-wide Flash

• Packages Available

To meet surface mount and conventional through hole

requirements, the SST37VF010/020/040 are offered in 32-

lead PLCC, 32-lead TSOP , and 32-pin PDIP packages.

See Figures 2, 3, and 4 for pin assignments.

Device Operation

The SST37VF010/020/040 devices are nonvolatile mem-

ory solutions that can be used instead of standard flash

devices if in-system programmability is not required. It is

functionally (Read) and pin compatible with industry stan-

dard flash products.The device supports electrical Erase

operation via an external programmer.

Read

The Read operation of the SST37VF010/020/040 is con-

trolled by CE# and OE#. Both CE# and OE# have to be low

for the system to obtain data from the outputs. Once the

address is stable, the address access time is equal to the

delay from CE# to output (T

put after a delay of TOE from the falling edge of OE#,

assuming the CE# pin has been low and the addresses

have been stable for at least T

high, the chip is deselected and a standby current of only 2

µA (typical) is consumed. OE# is the output control and is

used to gate data from the output pins. The data bus is in

high impedance state when either CE# or OE# is V

to Figure 5 for the timing diagram.

– Byte-Program Time: 15 µs (typical)

– Chip Program Time:

– Does not require UV source

– Chip-Erase Time: 100 ms (typical)

EEPROM Pinouts

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

– Non-Pb (lead-free) packages available

2 seconds (typical) for SST37VF010

4 seconds (typical) for SST37VF020

8 seconds (typical) for SST37VF040

These specifications are subject to change without notice.

MTP is a trademark of Silicon Storage Technology, Inc.

). Data is available at the out-

-T

OE.

When the CE# pin is

Data Sheet

IH.

Refer

Related parts for SST37VF010

SST37VF010 Summary of contents

Page 1

... Fast Read Access Time: – • Latched Address and Data PRODUCT DESCRIPTION The SST37VF010/020/040 devices are 128K x8 / 256K x8 / 512K x8 CMOS, Many-Time Programmable (MTP), low cost flash, manufactured with SST’s proprietary, high per- formance CMOS SuperFlash technology. The split-gate ...

Page 2

... SST37VF010 SST37VF020 pins while CE SST37VF040 Design Considerations The SST37VF010/020/040 should have a 0.1 µF ceramic high frequency, low inductance capacitor connected between V close to the package terminals as possible. OE# and A tion of an Erase operation. OE# must remain stable at V for the entire duration of the Program operation. ...

Page 3

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 SST37VF040 SST37VF020 SST37VF010 DQ0 DQ0 FIGURE 2: Pin Assignments for 32-lead PLCC SST37VF040 SST37VF020 SST37VF010 A11 A11 A11 A13 A13 A13 A14 ...

Page 4

... SST37VF020, and Note ( case of OE# and 11.4-12V H ©2008 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 SST37VF010 SST37VF020 SST37VF040 A16 A16 2 31 WE# A15 3 30 A15 ...

Page 5

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° ...

Page 6

... Data Retention Latch Up LTH 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2008 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 =2.7-3.6V DD Limits Min Max Units µ ...

Page 7

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 AC CHARACTERISTICS TABLE 9: Read Cycle Timing Parameters V Symbol Parameter T Read Cycle Time RC T Chip Enable Access Time CE T Address Access Time AA T Output Enable Access Time CE# Low to Active Output CLZ 1 T OE# Low to Active Output ...

Page 8

... OE PRT ART WE# FIGURE 6: Chip-Erase Timing Diagram ©2008 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 OLZ CLZ DATA VALID T VPS T A9S CES ...

Page 9

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 ADDRESS CE# DQ 7-0 HIGH OE WE# FIGURE 7: Byte-Program Timing Diagram ©2008 Silicon Storage Technology, Inc ADDRESS VALID DATA VALID T VPS T PRT CES 9 Data Sheet CEH VPH 1151 F05 ...

Page 10

... V (0.5 V) and V IT FIGURE 8: AC Input/Output Reference Waveforms TO DUT FIGURE 9: A Test Load Example ©2008 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 V IT REFERENCE POINTS ) for a logic “1” and V (0 ILT DD (0 ...

Page 11

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 FIGURE 10: Chip-Erase Algorithm ©2008 Silicon Storage Technology, Inc. Start OE CE Erase 100ms pulse (WE WE OE#/ Wait T VR Recovery Time Read Device No Compare all bytes to FF ...

Page 12

... Data Sheet Address = First Location; Increment Address No *See Figure 10 FIGURE 11: Byte-Program Algorithm ©2008 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 Start Erase* OE Load Data CE Program 15 µs pulse (WE Last Address? OE Yes Wait T VR ...

Page 13

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 PRODUCT ORDERING INFORMATION SST 37 VF 040 - XXXX - XXX ©2008 Silicon Storage Technology, Inc XXX X Environmental Attribute non-Pb Package Modifier pins or leads Package Type N = PLCC P = PDIP W = TSOP (type 1, die up, 8mm x 14mm) Operating Temperature C = Commercial = 0° ...

Page 14

... Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. * Not recommended for new designs. ©2008 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 SST37VF010-70-3C-PHE SST37VF020-70-3C-PHE SST37VF040-70-3C-PHE 14 ...

Page 15

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 PACKAGING DIAGRAMS TOP VIEW .495 .485 .453 Optional .447 Pin #1 .048 Identifier .042 .042 .048 .595 .553 .585 .547 .050 BSC Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. ...

Page 16

... All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0 Maximum allowable mold flash is 0. the package ends, and 0.25 mm between leads. FIGURE 13: 32-lead Thin Small Outline Package (TSOP) 8mm x 14mm SST Package Code: WH ©2008 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 8.10 7.90 1.20 max. 16 1.05 ...

Page 17

... Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 Pin #1 Identifier .075 .065 Base Plane Seating Plane .050 .015 .080 .065 .070 .045 Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (max/min). ...

Page 18

... Fixed mistake in document status by removing “EOL” Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 ©2008 Silicon Storage Technology, Inc. 1 Mbit / 2 Mbit / 4 Mbit Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 Description Read Current parameter in Table 4 on page 5 DD ...

Related keywords

SST37VF010 datasheet
SST37VF010 data sheet
SST37VF010 pdf datasheet
SST37VF010 component
SST37VF010 part
SST37VF010 distributor
SST37VF010 RoHS
SST37VF010 datasheet download