MD51V65165E Oki Semiconductor, MD51V65165E Datasheet

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MD51V65165E

Manufacturer Part Number
MD51V65165E
Description
4,194,304-word 16-bit Dynamic Ram Fast Page Mode Type With Edo
Manufacturer
Oki Semiconductor
Datasheet

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DESCRIPTION
The MD51V65165E is a 4,194,304-word 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MD51V65165E achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal
CMOS process. The MD51V65165E is available in a 50-pin plastic TSOP.
FEATURES
· 4,194,304-word
·
·
·
·
·
· CAS before RAS refresh, hidden refresh, RAS-only refresh capability
· Packages
PRODUCT FAMILY
OKI Semiconductor
MD51V65165E
4,194,304-Word
Single 3.3V power supply, 0.3V tolerance
Input
Output : LVTTL compatible, 3-state
Refresh :
Fast page mode with EDO, read modify write capability
50-pin 400mil plastic TSOP
MD51V65165E
Family
: LVTTL compatible, low input capacitance
RAS
CAS
only refresh
before
16-bit configuration
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
RAS
50ns
60ns
t
RAC
refresh, hidden refresh
Access Time (Max.)
25ns
30ns
t
AA
(
TSOPII50-P-400-0.80-K
13ns
15ns
t
CAC
13ns
15ns
t
OEA
: 4096 cycles/64ms
: 4096 cycles/64ms
)
Cycle Time
104ns
(Min.)
(Product : MD51V65165E-xxTA)
xx indicates speed rank.
84ns
Operating
504mW
432mW
(Max.)
Issue Date: Aug. 28, 2002
Power Dissipation
FEDD51V65165E-02
Standby
1.8mW
(Max.)
1/16

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MD51V65165E Summary of contents

Page 1

... DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MD51V65165E is a 4,194,304-word 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MD51V65165E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process ...

Page 2

... Plastic TSOP (K Type) Function Address Input Row Address Strobe Lower Byte Column Address Strobe Upper Byte Column Address Strobe Data Input/Data Output Output Enable Write Enable Power Supply (3.3V) Ground (0V) No Connection pin, and the same GND voltage level must CC FEDD51V65165E-02 MD51V65165E 2/16 ...

Page 3

... High High OUT L High OUT H D Don’t Care IN H Don’t Care High-Z FEDD51V65165E-02 MD51V65165E Output 8 8 Buffers DQ1-DQ8 Input 8 8 Buffers I/O 16 Input 8 8 Buffers DQ9-DQ16 Output 8 8 Buffers Function Mode High-Z Standby High-Z Refresh ...

Page 4

... Symbol Min. C — IN1 C — IN2 C — I/O FEDD51V65165E-02 MD51V65165E Value Unit –0 +0 –0 °C –55 to 150 ° ...

Page 5

... V V +0.3V 140 2 IH 0.5 0.2V , 140 140 , IL 140 = Min. for output open condition FEDD51V65165E-02 MD51V65165E (V = 3.3V 0.3V 70°C) CC MD51V65165 E-60 Unit Note Min. Max 120 mA 1 0.5 120 mA 1 120 ...

Page 6

... RAS t 50 100,000 RASP t 7 RSH t 7 ROH 10,000 CAS t 35 CSH t 5 CRP t 30 RHCP t 5 CHO FEDD51V65165E-02 MD51V65165E 0.3V 70°C) Note1,2,3 MD51V65165 E-60 Unit Note Max ...

Page 7

... CWD AWD RWD CPWD t 5 RPC t 5 CSR CHR WRP WRH FEDD51V65165E-02 MD51V65165E 0.3V 70°C) Note1,2,3 E-60 Unit Note Max 9, 10, ...

Page 8

... They are included in the data CPWD t (Min.), then the cycle is an early write cycle and WCS WCS t (Min.) and t t AWD AWD CPWD CPWD FEDD51V65165E-02 MD51V65165E T (Max.) limit, RCD (Max.) limit, RAD t CWD CWD (Min.), then the cycle is a read modify 8/16 ) ...

Page 9

... Valid Data-out RAS t CSH t t RCD RSH t CAS t RAL t CAH t ASC Column t CWL t WCH RWL Valid Data-in FEDD51V65165E-02 MD51V65165E CRP t RRH t RCH t REZ t CEZ t OEZ “H” or “L” CRP Open “H” or “L” 9/16 ...

Page 10

... RWC t RAS t CSH t t RCD RSH t CAS t t CAH ASC Column t t CWD RCS t RWD t AWD OEA t OED t CAC RAC t OEZ t CLZ Valid Data-out FEDD51V65165E-02 MD51V65165E CRP t CWL t RWL OEH t DH Valid Data-in “H” or “L” 10/16 ...

Page 11

... ASC CAH CAH t ASC Column Column t RCS RCH t WPE OEA CAC WEZ CAC Valid Data-out t CLZ FEDD51V65165E-02 MD51V65165E RHCP CAS t t ASC CAH CAH Column t t OCH RRH t t CAC CHO t OEP OEP t OEA t ...

Page 12

... OEA t t OED OEH CAC OEZ DH CAC Valid Valid Data-out Data- CLZ CLZ FEDD51V65165E-02 MD51V65165E HPC RSH t CAS t t ASC CAH Column t t WCS WCH Valid Data-in “H” or “L” t ...

Page 13

... RAS RAH Open Note: WE “H” or “L” t RAS t CSR t CHR t t WRP WRH Open Note: OE, Address = “H” or “L” FEDD51V65165E-02 MD51V65165E RPC “H” or “L” RPC t WRP “H” or “L” 13/16 ...

Page 14

... RAS t t RCD RSH RP t CAH t ASC Column t RAL t RWL WCH WRP Valid Data-in FEDD51V65165E-02 MD51V65165E RAS CHR t REZ t t WRH CEZ t OEZ “H” or “L” RAS CHR t WRH “H” or “L” ...

Page 15

... Semiconductor REVISION HISTORY Document Date No. FEDD51V65165E-01 Jan., 2002 FEDD51V65165E-02 Aug., 2002 Page Previous Current Edition Edition – – Final edition Deleted SOJ package FEDD51V65165E-02 MD51V65165E Description 15/16 ...

Page 16

... The purchaser assumes the responsibility of determining the legality of export of these products and will take appropriate and necessary steps at their own expense for these part of the contents contained herein may be reprinted or reproduced without our prior permission. FEDD51V65165E-02 MD51V65165E Copyright 2002 Oki Electric Industry Co., Ltd. 16/16 ...

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