MD51V65805E Oki Semiconductor, MD51V65805E Datasheet

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MD51V65805E

Manufacturer Part Number
MD51V65805E
Description
8,388,608-word 8-bit Dynamic Ram Fast Page Mode Type With Edo
Manufacturer
Oki Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MD51V65805E-50TA
Manufacturer:
FUJITSU
Quantity:
264
Part Number:
MD51V65805E-60TA
Manufacturer:
OKI/散
Quantity:
20 000
DESCRIPTION
The MD51V65805E is a 8,388,608-word 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MD51V65805E achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal
CMOS process. The MD51V65805E is available in a 32-pin plastic SOJ or 32-pin plastic TSOP.
FEATURES
· 8,388,608-word
·
·
·
·
·
· CAS before RAS refresh, hidden refresh, RAS-only refresh capability
· Packages
PRODUCT FAMILY
OKI Semiconductor
MD51V65805E
8,388,608-Word
Single 3.3V power supply, 0.3V tolerance
Input
Output : LVTTL compatible, 3-state
Refresh :
Fast page mode with EDO, read modify write capability
32-pin 400mil plastic SOJ
32-pin 400mil plastic TSOP
MD51V65805E
Family
: LVTTL compatible, low input capacitance
RAS
CAS
only refresh
before
8-bit configuration
8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
RAS
50ns
60ns
t
RAC
refresh, hidden refresh
Access Time (Max.)
25ns
30ns
t
AA
(
(
SOJ32-P-400-1.27
TSOPII32-P-400-1.27-K
13ns
15ns
t
CAC
13ns
15ns
t
)
OEA
: 4096 cycles/64ms
: 4096 cycles/64ms
)
Cycle Time
104ns
(Min.)
(Product : MD51V65805E-xxJA)
(Product : MD51V65805E-xxTA)
xx indicates speed rank.
84ns
Operating
504mW
432mW
(Max.)
Issue Date: Dec. 27, 2002
Power Dissipation
FEDD51V65805E-01
Standby
1.8mW
(Max.)
1/16

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MD51V65805E Summary of contents

Page 1

... The MD51V65805E is a 8,388,608-word 8-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MD51V65805E achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MD51V65805E is available in a 32-pin plastic SOJ or 32-pin plastic TSOP. FEATURES · 8,388,608-word 8-bit configuration Single 3 ...

Page 2

... Plastic TSOP Function Address Input Row Address Strobe Column Address Strobe Data Input/Data Output Output Enable Write Enable Power Supply (3.3V) Ground (0V) No Connection pin, and the same GND voltage level must CC FEDD51V65805E-01 MD51V65805E DQ8 30 DQ7 29 DQ6 28 DQ5 V 27 ...

Page 3

... Refresh Address A0-A10 Control Clock Counter Row Row 11 12 Address Deco- Buffers ders 1 A10R Chip V Generator BB On Chip IV Generator I/O Controller 10 Column Decoders I/O Sense Amplifiers 8 Selector Word Memory Drivers Cells FEDD51V65805E-01 MD51V65805E Output 8 8 Buffers DQ1-DQ8 Input 8 8 Buffers 8 3/16 ...

Page 4

... Symbol Min. C — IN1 C — IN2 C — I/O FEDD51V65805E-01 MD51V65805E Value Unit –0 +0 –0 °C –55 to 150 ° ...

Page 5

... V V +0.3V 140 1 IH 0.5 0.2V , 140 140 , IL 140 = Min. for output open condition FEDD51V65805E-01 MD51V65805E (V = 3.3V 0.3V 70°C) CC MD51V65805 E-60 Unit Note Min. Max 120 mA 1 0.5 120 mA 1 120 ...

Page 6

... RAS t 50 100,000 RASP t 7 RSH t 7 ROH 10,000 CAS t 35 CSH t 5 CRP t 30 RHCP t 5 CHO FEDD51V65805E-01 MD51V65805E 0.3V 70°C) Note1,2,3 MD51V65805 E-60 Unit Note Max 4 4 ...

Page 7

... CWD AWD RWD CPWD t 5 RPC t 5 CSR CHR WRP WRH FEDD51V65805E-01 MD51V65805E 0.3V 70°C) Note1,2,3 E-60 Unit Note Max ...

Page 8

... They are included in the data CPWD t (Min.), then the cycle is an early write cycle and WCS WCS t (Min.) and t t AWD AWD CPWD CPWD FEDD51V65805E-01 MD51V65805E T (Max.) limit, RCD (Max.) limit, RAD t CWD CWD (Min.), then the cycle is a read modify 8/16 ) ...

Page 9

... Valid Data-out RAS t CSH t t RCD RSH t CAS t RAL t CAH t ASC Column t CWL t WCH RWL Valid Data-in FEDD51V65805E-01 MD51V65805E CRP t RRH t RCH t REZ t CEZ t OEZ “H” or “L” CRP Open “H” or “L” 9/16 ...

Page 10

... RWC t RAS t CSH t t RCD RSH t CAS t t CAH ASC Column t t CWD RCS t RWD t AWD OEA t OED t CAC RAC t OEZ t CLZ Valid Data-out FEDD51V65805E-01 MD51V65805E CRP t CWL t RWL OEH t DH Valid Data-in “H” or “L” 10/16 ...

Page 11

... ASC CAH CAH t ASC Column Column t RCS RCH t WPE OEA CAC WEZ CAC Valid Data-out t CLZ FEDD51V65805E-01 MD51V65805E RHCP CAS t t ASC CAH CAH Column t t OCH RRH t t CAC CHO t OEP OEP t OEA t ...

Page 12

... OEA t t OED OEH CAC OEZ DH CAC Valid Valid Data-out Data- CLZ CLZ FEDD51V65805E-01 MD51V65805E HPC RSH t CAS t t ASC CAH Column t t WCS WCH Valid Data-in “H” or “L” t ...

Page 13

... RAS RAH Open Note: WE “H” or “L” t RAS t CSR t CHR t t WRP WRH Open Note: OE, Address = “H” or “L” FEDD51V65805E-01 MD51V65805E RPC “H” or “L” RPC t WRP “H” or “L” 13/16 ...

Page 14

... RAS t t RCD RSH RP t CAH t ASC Column t RAL t RWL WCH WRP Valid Data-in FEDD51V65805E-01 MD51V65805E RAS CHR t REZ t t WRH CEZ t OEZ “H” or “L” RAS CHR t WRH “H” or “L” ...

Page 15

... OKI Semiconductor REVISION HISTORY Document Date No. PEDD51V65805E-01 Jul. 1, 2002 FEDD51V65805E-01 Dec. 27, 2002 Page Previous Current Edition Edition – – Preliminary edition 1 Final edition FEDD51V65805E-01 MD51V65805E Description 15/16 ...

Page 16

... The purchaser assumes the responsibility of determining the legality of export of these products and will take appropriate and necessary steps at their own expense for these part of the contents contained herein may be reprinted or reproduced without our prior permission. FEDD51V65805E-01 MD51V65805E Copyright 2002 Oki Electric Industry Co., Ltd. 16/16 ...

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