c430cb230-s0100 Cree, Inc., c430cb230-s0100 Datasheet
c430cb230-s0100
Manufacturer Part Number
c430cb230-s0100
Description
Manufacturer
Cree, Inc.
Datasheet
1.C430CB230-S0100.pdf
(2 pages)
SuperBlue™ LEDs
C430CB230-S000
Cree’s low-current SuperBlue LEDs combine highly efficient GaN with Cree’s proprietary G•SiC® substrate to deliver
the ultimate price/performance for blue LEDs. The C430CB230-S0100 is designed for use in backlighting and
display applications. Cree’s CB chips are sorted onto tape and compatible with most radial and SMT LED assembly
processes.
FEATURES
C430CB230-S000 Chip Diagram
•
•
•
Top View
High Performance
–
Single Wire Bond Structure
Class 2 ESD Rating
650 μW (465 nm)
G•SiC LED Chip
200 x 200 μm
Mesa (junction)
176 x 176 μm
Gold Bond Pad
112 μm Diameter
Subject to change without notice.
www.cree.com
Bottom View
APPLICATIONS
•
•
Segmented Displays
High-Resolution Video Displays
SiC Substrate
Backside
Metallization
t = 250 μm
Cathode (-)
Anode (+)
Die Cross Section
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c430cb230-s0100 Summary of contents
Page 1
... Cree’s low-current SuperBlue LEDs combine highly efficient GaN with Cree’s proprietary G•SiC® substrate to deliver the ultimate price/performance for blue LEDs. The C430CB230-S0100 is designed for use in backlighting and display applications. Cree’s CB chips are sorted onto tape and compatible with most radial and SMT LED assembly processes ...
Page 2
... Typical Electrical/Optical Characteristics at T Forward Radiant Flux Part Number Voltage (P, μ Typ. Max. Min. C430CB230-S0100 4.0 4.5 425 Mechanical Specifications Description P-N Junction Area (μm) Top Area (μm) Bottom Area (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) Notes: 1 ...