bpw3408 Vishay, bpw3408 Datasheet

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bpw3408

Manufacturer Part Number
bpw3408
Description
Silicon Pin Photodiode
Manufacturer
Vishay
Datasheet
Silicon PIN Photodiode
Description
The BPW34 is a high speed and high sensitive PIN
photodiode in a miniature flat plastic package. Its top
view construction makes it ideal as a low cost replace-
ment of TO-5 devices in many applications.
Due to its waterclear epoxy the device is sensitive to
visible and infrared radiation. The large active area
combined with a flat case gives a high sensitivity at a
wide viewing angle.
Features
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 81521
Rev. 1.9, 13-Nov-06
• Large radiant sensitive area (A = 7.5 mm
• Wide angle of half sensitivity ϕ = ± 65°
• High photo sensitivity
• Fast response times
• Small junction capacitance
• Suitable for visible and near infrared radiation
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
Breakdown Voltage
Reverse Dark Current
Diode capacitance
amb
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
T
t ≤ 3 s
I
V
V
V
R
amb
R
R
R
= 100 μA, E = 0
= 10 V, E = 0
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
≤ 25 °C
Test condition
Test condition
2
)
e3
Applications
Symbol
• High speed photo detector
V
C
C
(BR)
I
ro
D
D
Symbol
R
T
T
V
P
thJA
T
stg
sd
R
V
j
Min
60
94 8583
- 55 to + 100
Vishay Semiconductors
Value
Typ.
215
100
260
350
60
70
25
2
Max
30
40
BPW34
www.vishay.com
K/W
Unit
mW
°C
°C
°C
V
Unit
nA
pF
pF
V
1

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bpw3408 Summary of contents

Page 1

... High speed photo detector e3 Test condition Symbol stg thJA Test condition Symbol V (BR BPW34 Vishay Semiconductors 94 8583 Value Unit 60 V 215 mW 100 ° 100 °C 260 °C 350 K/W Min Typ. Max www.vishay.com Unit ...

Page 2

... BPW34 Vishay Semiconductors Optical Characteristics °C, unless otherwise specified amb Parameter Open Circuit Voltage mW/cm e Temp. Coefficient mW/ klx Short Circuit Current mW/cm e Temp. Coefficient mW/ klx, V Reverse Light Current mW/ ...

Page 3

... Figure 6. Diode Capacitance vs. Reverse Voltage 1.0 0.8 0.6 0.4 0 8420 Figure 7. Relative Spectral Sensitivity vs. Wavelength 100 10 94 8406 Figure 8. Relative Radiant Sensitivity vs. Angular Displacement BPW34 Vishay Semiconductors MHz 0 100 V - Reverse Voltage ( 1150 350 550 750 950 λ ...

Page 4

... BPW34 Vishay Semiconductors Package Dimensions in mm www.vishay.com 4 96 12186 Document Number 81521 Rev. 1.9, 13-Nov-06 ...

Page 5

... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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