2pb709axw-series NXP Semiconductors, 2pb709axw-series Datasheet - Page 3

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2pb709axw-series

Manufacturer Part Number
2pb709axw-series
Description
2pb709aw Pnp General Purpose Transistors
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
CHARACTERISTICS
T
Note
1. Pulse test: t
2002 Jun 26
R
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
th j-a
c
PNP general purpose transistor
Handbook SC18”.
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
p
2PB709AQW
2PB709ARW
2PB709ASW
2PB709AQW
2PB709ARW
2PB709ASW
300 s;
PARAMETER
PARAMETER
0.02.
I
I
I
I
I
note 1
I
f = 1 MHz
I
f = 100 MHz
E
E
C
C
C
E
C
= 0; V
= 0; V
= i
= 0; V
= 2 mA; V
= 100 mA; I
= 1 mA; V
e
= 0; V
3
CB
CB
EB
CONDITIONS
note 1
= 45 V
= 45 V; T
= 5 V
CB
CE
CE
CONDITIONS
B
= 10 V;
= 10 V
= 10 V;
= 10 mA;
j
= 150 C
160
210
290
60
70
80
MIN.
VALUE
625
Product specification
260
340
460
5
2PB709AW
10
5
10
500
MAX.
UNIT
K/W
nA
nA
mV
pF
MHz
MHz
MHz
A
UNIT

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