bcw66g-d87z Fairchild Semiconductor, bcw66g-d87z Datasheet
bcw66g-d87z
Manufacturer Part Number
bcw66g-d87z
Description
Bcw66g Npn General Purpose Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
1.BCW66G-D87Z.pdf
(4 pages)
©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at
• Sourced from process 13.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
V
V
V
I
T
BV
BV
BV
I
I
h
V
V
C
C
f
NF
t
t
C
CES
EBO
T
on
off
Symbol
collector currents to 500mA.
FE
J
CEO
CBO
EBO
CE
BE
obo
ibo
, T
CBO
CEO
EBO
Symbol
(sat)
(sat)
STG
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
Current gain Bandwidth Product
Noise Figure
Turn-On Time
Turn-Off Time
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Parameter
T
C
=25 C unless otherwise noted
Parameter
- Continuous
T
C
=25 C unless otherwise noted
BCW66G
I
I
I
V
V
V
V
V
V
V
I
I
I
V
V
V
f = 100MHz
V
f = 1KHz, BW = 200Hz
I
I
C
C
E
C
C
C
B1
C
CB
CB
EB
CE
CE
CE
CE
CB
EB
CE
CE
= 10 A
= 10 A
= 10mA
= 100mA, I
= 500mA, I
= 500mA, I
= 150mA, R
= I
= 4V
= 0.5V, f = 1MHz
= 45V, I
= 45V, I
= 10V, I
= 1V, I
= 1V, I
= 2V, I
= 10V, f = 1MHz
= 10V, I
= 5V, I
B2
= 15mA
Test Condition
C
C
C
C
E
E
C
C
= 10mA
= 100mA
= 500mA
= 0.2mA, R
B
B
B
= 0
= 0
= 100 A
= 20mA,
L
= 10mA
= 50mA
= 50mA
= 150
T
A
S
= 150 C
= 1k ,
1. Base 2. Emitter 3. Collector
- 55 ~ +150
Min.
110
160
100
3
75
45
50
60
Value
5
45
75
5
1
Typ.
1
SOT-23
Mark: EG
Max.
400
100
400
0.3
0.7
20
20
20
12
80
10
2
Rev. A1, August 2002
2
Units
V
V
V
A
C
Units
MHz
nA
nA
dB
pF
pF
ns
V
V
V
V
V
A
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bcw66g-d87z Summary of contents
Page 1
... C Output Capacitance obo C Input Capacitance ibo f Current gain Bandwidth Product T NF Noise Figure t Turn-On Time on t Turn-Off Time off ©2002 Fairchild Semiconductor Corporation BCW66G T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted C Test Condition 10mA ...
Page 2
... Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Ambient JA ©2002 Fairchild Semiconductor Corporation Parameter Min. Typ. Max. Units 350 mW 2.8 mW/ C 357 C/W Rev. A1, August 2002 ...
Page 3
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A1, August 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...