tpd-8d12 Roithner LaserTechnik GmbH, tpd-8d12 Datasheet

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tpd-8d12

Manufacturer Part Number

tpd-8d12

Description

Gaas Pin Photodiode Chip

Manufacturer

Roithner LaserTechnik GmbH

Datasheet

1.TPD-8D12.pdf (1 pages)

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TPD-8D12

GaAs PIN photodiode chip

FEATURES:

• Optimized for fiber optic application.

• Low dark current and low capacitance.

ELECTRO-OPTICAL CHARACTERISTICS:

PARAMETERS

Responsivity

Forward Current

Dark Current

Breakdown Voltage

Capacitance

Fig. 1 Typical Dark Current and Forward Current

Fig. 3 Typical Breakdown Curve

OUTLINE DIAGRAM:

• Chip size is typical 250x250 m square.

• Sensitive area is typical 100 m in diameter.

1E-10

1E-11

1E-12

1E-13

1E-10

1E-11

1E-12

1E-4

1E-5

1E-6

1E-7

1E-8

1E-9

1E-3

1E-4

1E-5

1E-6

1E-7

1E-8

1E-9

-6

0

20

-4

Reverse Bias (V)

40

Voltage (V)

-2

60

0

80

SYMBOL

2

V

100

I

I

R

C

BD

D

F

MIN

0.55

100

50

TYP

0.6

0.2

0.7

85

Fig. 2 Typical Photo-Current

Fig. 4 Typical C-V Curve

-1.0x10

-2.0x10

2.0x10

1.0x10

0.7

0.6

0.5

0.4

0.3

0.2

0.0

- 4

- 4

- 4

- 4

MAX

-6

0.63

1.0

1

0

GaAs PIN under

850nm VCSELs light illumination

-5

2

-4

Reverse Bias (V)

-3

Bias voltage (V)

UNIT

A/W

4

nA

pF

V

A

-2

6

-1

V

V

V

I

V

TEST CONDITIONS

8

R

0

R

F

R

R

=10 A

=1V

=5V, =850nm

=5V

=5V, f=1 MHz

1

10

2

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