vq1004j/p Vishay, vq1004j/p Datasheet

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vq1004j/p

Manufacturer Part Number
vq1004j/p
Description
N-channel 60-v D-s Single And Quad Mosfets
Manufacturer
Vishay
Datasheet
Notes
a.
b.
Document Number: 70222
S-04379—Rev. E, 16-Jul-01
PRODUCT SUMMARY
Part Number
FEATURES
D Low On-Resistance: 1.3 W
D Low Threshold: 1.7 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 8 ns
D Low Input and Output Leakage
G
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
(T
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Operating Junction and Storage Temperature Range
S
J
VQ1004J/P
Pulse width limited by maximum junction temperature.
This parameter not registered with JEDEC.
= 150_C)
2N6660
1
2
TO-205AD
Top View
2N6660
(TO-39)
N-Channel 60-V (D-S) Single and Quad MOSFETs
V
a
3
(BR)DSS
D
Parameter
60
Min (V)
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
Device Marking
b
Side View
“S” fllxxyy
2N6660
r
DS(on)
3.5 @ V
3 @ V
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
T
T
T
T
GS
C
C
GS
C
C
Max (W)
= 100_C
= 100_C
= 25_C
= 25_C
= 10 V
= 10 V
A
= 25_C UNLESS OTHERWISE NOTED)
V
N
N
GS(th)
0.8 to 2.5
0.8 to 2
Symbol
T
R
R
J
V
V
I
P
, T
DM
thJA
thJC
I
DS
GS
D
D
NC
stg
(V)
G
G
D
S
S
D
1
1
1
2
2
2
1
2
3
4
5
6
7
2N6660
Sidebraze: VQ1004P
"20
6.25
170
1.1
0.8
2.5
60
20
3
Dual-In-Line
Plastic: VQ1004J
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
D Battery Operated Systems
D Solid-State Relays
I
D
0.46
1.1
Top View
Displays, Memories, Transistors, etc.
(A)
VQ1004J
"30
0.46
0.26
0.52
0.96
1.3
60
2
Single
2N6660, VQ1004J/P
–55 to 150
14
13
12
11
10
9
8
VQ1004P
"0.46
D
S
G
NC
G
S
D
"20
0.26
0.52
0.96
4
4
3
3
1.3
4
3
60
2
Vishay Siliconix
N
N
Total Quad
VQ1004J/P
62.5
0.8
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
2
Device Marking
www.vishay.com
“S” fllxxyy
“S” fllxxyy
Top View
VQ1004P
VQ1004J
Unit
_
_C/W
_C
W
V
A
11-1

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vq1004j/p Summary of contents

Page 1

... DM 6. 25_C 100_C 2 170 thJA R 20 thJC stg 2N6660, VQ1004J/P Vishay Siliconix I (A) D 1.1 0.46 APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Device Marking ...

Page 2

... VQ1004J/P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Symbol Static Drain-Source V (BR)DSS Breakdown Voltage Gate-Threshold Voltage V GS(th) Gate-Body Leakage I GSS Zero Gate Zero Gate I DSS Voltage Drain Current b On-State Drain Current I D(on) b Drain-Source On-Resistance r DS(on) b Forward Transconductance Common Source g b Output Conductance ...

Page 3

... D Document Number: 70222 S-04379—Rev. E, 16-Jul-01 = 25_C UNLESS OTHERWISE NOTED 25_C 125_C 1.6 2.0 2N6660, VQ1004J/P Vishay Siliconix Output Characteristics for Low Gate Drive 100 0.4 0.8 1.2 V – Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... VQ1004J/P Vishay Siliconix TYPICAL CHARACTERISTICS (T Threshold Region 150_C J 1 0.1 125_C 0.01 0.5 1.0 1.5 V – Gate-to-Source Voltage (V) GS Gate Charge 10.0 7.5 5.0 2 100 200 300 Q – Total Gate Charge (pC) g Normalized Effective Transient Thermal Impedance, Junction-to-Case (TO-205AD) 1 ...

Page 5

... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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