c450tr5050m-0213 Cree, Inc., c450tr5050m-0213 Datasheet

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c450tr5050m-0213

Manufacturer Part Number
c450tr5050m-0213
Description
Manufacturer
Cree, Inc.
Datasheet
TR5050M™ LEDs
CxxxTR5050M-Sxx000
Data Sheet
Cree’s TR5050M LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
and general-illumination markets. The TR5050M LEDs are among the brightest in the top-view market while delivering
FEATURES
CxxxTR5050M-Sxx000 Chip Diagram
a low forward voltage, resulting in a very bright and highly efficient solution. The metal backside allows for eutectic
die attach and enables superior performance from improved thermal management. The design is optimally suited for
industry-standard top-view packages.
Rectangular LED RF Performance
– 450 nm – 180 mW min
High-Reliability – Eutectic, Solder Paste or Preforms
Attach
Low Forward Voltage – 3.3 V Typical at 120 mA
Maximum DC Forward Current - 200 mA
Class 2 ESD Rating
InGaN Junction on Thermally Conductive SiC
Substrate
Top View
Cathode (-)
98-μm diameter
Anode (+)
90-μm diameter
Subject to change without notice.
Die Cross Section
www.cree.com
t = 175 μm
APPLICATIONS
Bottom Surface
320 x 320 μm
Metal backside
288 x 288 μm
TR5050M LED
500 x 500 μm
Large LCD Backlighting
– Television
General Illumination
Medium LCD Backlighting
– Portable PCs
– Monitors
LED Video Displays
White LEDs
Bottom View
1

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c450tr5050m-0213 Summary of contents

Page 1

TR5050M™ LEDs CxxxTR5050M-Sxx000 Data Sheet Cree’s TR5050M LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting and general-illumination markets. The TR5050M LEDs are among the brightest in the top-view market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The metal backside allows for eutectic die attach and enables superior performance from improved thermal management. The design is optimally suited for industry-standard top-view packages. FEATURES • Rectangular LED RF Performance – 450 nm – 180 mW min • High-Reliability – Eutectic, Solder Paste or Preforms Attach • Low Forward Voltage – 3.3 V Typical at 120 mA • Maximum DC Forward Current - 200 mA • Class 2 ESD Rating • InGaN Junction on Thermally Conductive SiC Substrate CxxxTR5050M-Sxx000 Chip Diagram Top View Cathode (-) 98-μm diameter Anode (+) 90-μm diameter APPLICATIONS • ...

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... Peak Forward Current (1/10 duty cycle @ 1 kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Typical Electrical/Optical Characteristics at T Part Number Forward Voltage (V Min. C450TR5050M-Sxx000 2.7 Mechanical Specifications Description P-N Junction Area (μm) Chip Area (μm) Chip Thickness (μm) Au Bond Pad Diameter Anode (μm) Au Bond Pad Thicknesses (μm) Au Bond Pad Diamater Cathode (μm) Bottom Contact Metal (um) Bottom Area (μm) Max Vf @Max If (V) Bottom Contact Metal Thickness (μ ...

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... Standard Bins for CxxxTR5050M-Sxx000 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR5050M-Sxxxx) orders may be filled with any or all bins (CxxxTR5050M-xxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are 120 mA. C450TR5050M-0213 220.0 C450TR5050M-0209 200.0 C450TR5050M-0205 180.0 445 Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp. ...

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Characteristic Curves These are representative measurements for the TR5050M LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage 250 200 150 100 (V) Dominant Wavelength Shift vs Junction Temp 6 Relative Intensity vs. Forward Current 5 200% Voltage Shift vs Junction Temperature 4 ...

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Radiation Pattern This is a representative radiation pattern for the TR5050M LED product. Actual patterns will vary slightly for each chip. Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TM and TR5050M are trademarks of Cree, Inc. 5 CPR3EX Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com ...

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