mg1001-11 Microsemi Corporation, mg1001-11 Datasheet
mg1001-11
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mg1001-11 Summary of contents
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... MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. MDT Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5–110 GHz. Microsemi Microwave Products GUNN Diodes Cathode Heat Sink MG1001 – MG1061 Page 1 ...
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... TM (Discrete Frequency: Cathode Heatsink) C Band Gunn Diodes (Specifications @ 25°C) Operating Part Frequency 1 Number (GHz) MG1001-11 5.9–8.2 MG1002-11 5.9–8.2 MG1003-15 5.9–8.2 MG1004-15 5.9–8.2 X Band Gunn Diodes (Specifications @ 25°C) Operating Part Frequen Number (GHz) MG1005-11 8.2–12.0 MG1006-11 8.2–12.0 MG1007-15 8.2–12.0 MG1008-15 8.2–12.0 Ku Band Gunn Diodes (Specifications @ 25° ...
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... Voltage ( Min. Typ. Power Operating Operating Current 2 (Watts) Voltage ( Microsemi Microwave Products GUNN Diodes Cathode Heat Sink MG1001 – MG1061 Operating Current Min. Max. Package (mA) (mA) Outline 300 700 600 1100 800 1400 800 1600 1000 1700 1000 ...
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... Rev: 2009-01-19 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 ® Ratio Ratio Bias www.MICROSEMI.com . Microsemi Microwave Products GUNN Diodes Cathode Heat Sink MG1001 – MG1061 300 250 200 90°C 150 100 Bias Voltage (V) Power Output vs. Bias Voltage These products are supplied with a RoHS ...