rt3nggm ISAHAYA ELECTRONICS CORPORRATION, rt3nggm Datasheet
rt3nggm
Manufacturer Part Number
rt3nggm
Description
Composite Transistor With Resistor For Switching Application Silicon Npn Epitaxial Type
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet
1.RT3NGGM.pdf
(3 pages)
DESCRIPTION
FEATURE
APPLICATION
MAXIMUM RATING (Ta=25℃)
PRELIMINARY
RT3NGGM is a composite transistor built with two
RT1N432 chips in SC-88 package.
Silicon NPN epitaxial type.
Built in bias resistor.
Each transistor elements are independent.
Mini package for easy mounting
Inverted circuit, switching circuit,
interface circuit, driver circuit
SYMBOL
V
V
V
V
I
I
P
T
T
C
CM
CBO
EBO
CEO
IN
C
j
stg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input voltage
Collector current
Peak Collector current
Collector dissipation（Total, Ta=25℃）
Junction temperature
Storage temperature
PARAMETER
ISAHAYA ELECTRONICS CORPORATION
(The characteristics apply to both Tr1 an
-55～＋150
RATING
＋150
100
200
150
50
50
20
7
OUTLINE DRAWING
RTr1
UNIT
mW
mA
mA
℃
℃
V
V
V
V
⑥
①
R2
R1
②
⑤
R1
MARKING
R2
①
②
③
d Tr2.)
Composite Transistor With Resistor
③
④
RTr2
2.1
1.25
⑥ ⑤ ④
① ② ③
Silicon NPN Epitaxial Type
.
N G
For Switching Application
RT3NGGM
⑥
⑤
④
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
G
Unit：mm
Related parts for rt3nggm
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
Silicon Interactive Swiching Device Smd Type
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
For Low Frequency Amplify Application P Channel Junction Type
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
J-fet Field-effect Transistor Smd Type
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
For Low Frequency Amplify Application N Channel Junction Type
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
For Low Frequency Amplify Application N Channel Junction Type
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
For High Speed Switching Application Silicon Epitaxial Type Common Cathode Outlinedrawing
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
For High Speed Switching Application Silicon Epitaxial Type Series Type Description
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
For High Speed Switching Application Silicon Epitaxial Type
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
For General Switching Application Silicon Epitaxial Type Series Type Outlinedrawing
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
Part Number:
Description:
For General Switching Application Silicon Epitaxial Type Series Type Outlinedrawing
Manufacturer:
ISAHAYA ELECTRONICS CORPORRATION
Datasheet:
rt3nggm Summary of contents
Page 1
... PRELIMINARY DESCRIPTION RT3NGGM is a composite transistor built with two RT1N432 chips in SC-88 package. FEATURE Silicon NPN epitaxial type. Built in bias resistor. Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit MAXIMUM RATING (Ta=25℃) ...
Page 2
... C V =5V，I =100µ =6V，I =-10mA 0.1 100 1 1.6 2.0 （ Ｖ ） RT3NGGM Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type Limits Min Typ 50 30 0.1 1.0 0.5 0.8 3.3 4.7 1.7 2.1 200 INPUT ON VOLTAGE 入力オン 電圧－コ レ ク タ 電流 ...
Page 3
Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...