sga-8543 Sirenza Microdevices, sga-8543 Datasheet

sga-8543

Manufacturer Part Number

sga-8543

Description

High Ip3, Medium Power Discrete Sige Transistor

Manufacturer

Sirenza Microdevices

Datasheet

1.SGA-8543.pdf (4 pages)

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Product Description

Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium

Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from

50 MHz to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can

be biased at 2.7V for low-voltage battery operated systems. The device

provides low NF and excellent linearity at a low cost. It can be operated over

a wide range of currents depending on the power and linearity requirements.

The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post

annealing process to mitigate tin whisker formation and is RoHS compliant per

EU Directive 2002/95. The package body is manufactured with green molding

compounds that contain no antimony trioxide or halogenated fire retardants.

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this

information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or

granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights

reserved.

Test Conditions: V

Broomfield, CO 80021

303 S. Technology Ct.

Symbol

NFmin

Rth, j-l

OIP

0.9

MAX

1dB

CEO

Typical Gmax, OIP3, P1dB @3.3V, 86mA

1.1

Maximun Available Gain

Insertion Gain

Power Gain

Output Power at 1dB Compression

Output Third Order Intercept Point

Noise Figure

Minimum Noise Figure with I

DC Current Gain

Collector - Emitter Breakdown Voltage

Gmax

Thermal Resistance (Junction - lead)

Device Operating Voltage (collector- emitter)

Device Operating Current (collector - emitter)

= Γ

[1] 100% production tested using 50 ohm contact board (no matching circuitry)

1.3

SOPT

= 3.3V, I

OPT

*, Z

Frequency (GHz)

, Z

1.5

[2]

[1]

LOPT

= 86mA Typ. (unless noted otherwise), T

1.7

Parameters

1.9

P1dB

OIP3

2.1

= 25mA

[2]

Phone: (800) SMI-MMIC

[2]

2.3

2.5

= 25°C

°C/W

Units

dBm

SGA-8543Z

High IP3, Medium Power Discrete

SiGe Transistor

Product Features

• .05-3.5 GHz Operation

•

• 1.5 dB NF

• 15.6 dB Gmax @ 2.44 GHz

• P

• OIP

• Low Cost, High Performance, Versatility

Applications

• Analog and Digital Wireless Systems

• 3G, Cellular, PCS, RFID

• Fixed Wireless, Pager Systems

• PA stage for Medium Power Applications

• AN-079 contains detailed application circuits

Lead Free, RoHS Compliant & Green Package

1dB

OIP

= +20.6 dBm @ 2.44 GHz

= +34.6 dBm @ 2.44 GHz

2440 MHz

Frequency

880 MHz

Tone Spacing = 1MHz, Pout per tone = 5 dBm

MIN

@ 2.44 GHz

[2] Data with Application Circuit

Min.

120

5.7

RoHS Compliant

Preliminary

Green

Package

http://www.sirenza.com

22.9

20.6

33.4

34.6

Typ.

180

151

3.1

2.4

1.0

1.5

EDS-102583 Rev C

Max.

300

3.8

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sga-8543 Summary of contents

Page 1

... Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50 MHz to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-voltage battery operated systems. The device provides low NF and excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements. The matte tin finish on Sirenza’ ...

Page 2

... RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative. 303 S. Technology Ct. Broomfield, CO 80021 SGA-8543Z Medium Power SiGe Discrete Transistor Absolute Limit 105 mA 4.5 V +18 dBm +150° ...

Page 3

... The device was mounted on Sirenza’s recommended evaluation board GHz 8 GHz .05 GHz Phone: (800) SMI-MMIC 3 SGA-8543Z Medium Power SiGe Discrete Transistor DCIV Curves (Volts 0.1 - 1.1 mA, T=25 B S22 Vs. Frequency 5 GHz 6 GHz 3.5 GHz 2 ...

Page 4

... 303 S. Technology Ct. Broomfield, CO 80021 SGA-8543Z Medium Power SiGe Discrete Transistor Description Package Dimension NOTE: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONS ARE INCLUSIVE OF PLATING DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH & METAL BURR. ...

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