vtb6061uv PerkinElmer, vtb6061uv Datasheet

vtb6061uv

Manufacturer Part Number

vtb6061uv

Description

Vtb Process Photodiodes

Manufacturer

PerkinElmer

Datasheet

1.VTB6061UV.pdf (1 pages)

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Large area planar silicon photodiode in a dual

lead TO-8 package with a UV transmitting “flat”

window. Cathode is common to the case. These

diodes have very high shunt resistance and

have good blue response.

ELECTRO-OPTICAL CHARACTERISTICS @ 25°C

SYMBOL

VTB Process Photodiodes

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

TC V

TC R

TC I

NEP

range

1/2

Short Circuit Current

Open Circuit Voltage

Dark Current

Shunt Resistance

Junction Capacitance

Sensitivity

Spectral Application Range

Spectral Response - Peak

Breakdown Voltage

Angular Resp. - 50% Resp. Pt.

Noise Equivalent Power

Specific Detectivity

Temperature Coefficient

CHARACTERISTIC

H = 100 fc, 2850 K

2850 K

H = 100 fc, 2850 K

2850 K

H = 0, VR = 2.0 V

H = 0, V = 10 mV

H = 0, V = 0

365 nm

220 nm

TEST CONDITIONS

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

Operating Temperature:

(See also VTB curves, pages 21-22)

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto

Min.

260

200

.04

CHIP ACTIVE AREA: .058 in

CASE 15 TO-8 HERMETIC

1.1 x 10

5.7 x 10

VTB6061UV

inch (mm)

Typ.

350

490

-2.0

-8.0

920

±55

.12

.10

8.0

.10

-14

VTB6061UV

(Typ.)

-40°C to 110°C

(37.7 mm

Max.

1100

.23

2.0

)

cm Hz

Degrees

UNITS

mV/°C

%/°C

A/W

µA

/ W

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