s9012t SeCoS Halbleitertechnologie GmbH, s9012t Datasheet
s9012t
Manufacturer Part Number
s9012t
Description
Pnp Epitaxial Silicon Transistor
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
1.S9012T.pdf
(2 pages)
01-Jun-2002 Rev. A
FEATURE
ELECTRICAL CHARACTERISTICS Tamb=25
CLASSIFICATION OF h
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Power dissipation
Collector current
Collector-base voltage
Operating and storage junction temperature range
Range
Rank
Parameter
Tj, T
P
I
V
CM:
CM
(BR)CBO
stg
: 0.625 W Tamb=25
:
-0.5
64-91
: -40 V
D
-55
FE(1)
A
to +150
78-112
A suffix of "-C" specifies halogen & lead-free
E
V(BR)
V(BR)
V(BR)
Symbol
V
V
h
h
I
I
I
CE(sat)
BE(sat)
CBO
CBO
EBO
FE(1)
FE(2)
f
T
RoHS Compliant Product
CBO
CEO
EBO
96-135
Ic= -100 A
I
I
V
V
V
V
V
I
I
V
f=30MHz
C
E
C
C
CB
CB
EB
CE
CE
CE
= -1 mA , I
= -100 A
= -500 mA, I
= -500 mA, I
Test
F
=- 5V, I
=- 40V , I
=-20V , I
=-1V, I
=-1V, I
=-6V,I
unless otherwise specified
C
conditions
C
C
=-20mA,
C
=-50mA
= -500mA
=0
B
E
PNP Epitaxial Silicon Transistor
B
B
E
=0
=0
= -50mA
=- 50mA
I
=0
C
I
=0
E
112-166
=0
(1.27 Typ.)
G
0. 46
4.55
1
Any changing of specification will not be informed individual
+0.1
–0.1
MIN
150
-40
-25
S9012T
64
40
-5
2
±0.2
3
2.54
144-202
±0.1
1.25
TO-92
TYP
H
0.43
+0.2
–0.2
+0.08
–0.07
3.5
1: Emitter
2: Base
3: Collector
MAX
±0.2
-0.1
-0.1
-0.1
-0.6
-1.2
300
190-300
I
UNIT
MHz
V
V
V
V
V
A
A
A
Page 1 of 2
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s9012t Summary of contents
Page 1
... V =-1V -500mA FE( -500 mA, I CE(sat -500 mA, I BE(sat =-6V,I =-20mA f=30MHz E F 78-112 96-135 S9012T PNP Epitaxial Silicon Transistor TO-92 4.55 3.5 ±0.2 ±0.2 +0.08 0.43 –0.07 +0 –0.1 (1.27 Typ.) 1: Emitter +0.2 1.25 2: Base –0 Collector 2.54 ±0.1 MIN TYP MAX I ...
Page 2
... V (sat) BE 100 V (sat =10I -100 -1000 Figure 4. Current Gain Bandwidth Product S9012T PNP Epitaxial Silicon Transistor V = -1V CE -100 -1000 I [mA], COLLECTOR CURRENT C Figure 2. DC current Gain V =-6V CE -10 -100 -1000 -10000 I [mA], COLLECTOR CURRENT C Any changing of specification will not be informed individual ...