mhw930 Freescale Semiconductor, Inc, mhw930 Datasheet
mhw930
Manufacturer Part Number
mhw930
Description
30 W 925.960 Mhz Rf Power Amplifier
Manufacturer
Freescale Semiconductor, Inc
Datasheet
1.MHW930.pdf
(3 pages)
©
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Silicon FET
Power Amplifier
station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt
supply and requires 60 mW of RF input power.
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(1) Adjust P in for specified P out .
MAXIMUM RATINGS
Motorola, Inc. 1997
DC Supply Voltage
DC Bias Voltage
RF Input Power
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Frequency Range
V S1 Quiescent Current (P in = 0 mW)
V S2 Quiescent Current (P in = 0 mW)
Power Gain (P out = 30 W) (1)
Output Power at 1 dB Compression
EFficiency (P out = 30 W) (1)
Input VSWR
Harmonic 2 f o (P out = 30 W) (1)
Harmonic 3 f o (P out = 30 W) (1)
Reverse Intermodulation Distortion (P carrier = 30 W; P interferer at –70 dBc; fi
Load Mismatch Stress
Stability
Designed specifically for the Pan European Digital Extended EGSM base
Specified 26 Volt and 25
50 Ohm Input/Output Impedances
= fc 600 kHz) (1)
(P out = 30 W; Load VSWR = 10:1; All Phase Angles)
(P out = 10 mW – 30 W; Load VSWR = 3:1; All Phase Angles;
T C = –10 C to 85 C)
RF Output: 30 Watts Min at 1.0 dB Compression Point
Efficiency: 44% Min at 30 Watts Output Power
RF Input Power: 60 mW Max
RF Power Gain: 27 dB Min at 30 W Output Power
Characteristic
C
Characteristics:
Rating
(V S = 26 Vdc; V BIAS = 26 Vdc; T C = +25 C; 50
VSWR IN
Symbol
Symbol
P1dB
P out
T stg
Iqs1
Iqs2
IMR
BW
P in
V S
V B
T C
G p
H 2
H 3
system)
All Spurious Outputs More than 70 dB Below
Min
925
—
—
27
30
44
—
—
—
—
No Degradation in Output Power
RF POWER AMPLIFIER
CASE 301AB–02, STYLE 1
– 10 to + 100
– 30 to + 100
MHW930
Value
Typ
130
28
28
22
50
—
65
—
35
49
—
—
—
—
925 – 960 MHz
Desired Signal
30 W
Order this document
Max
960
–35
–45
–80
2:1
—
—
31
—
—
by MHW930/D
MHW930
Watts
dBm
MHz
Unit
Unit
Vdc
Vdc
dBc
dBc
dBc
mA
mA
dB
W
%
C
C
1
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mhw930 Summary of contents
Page 1
... SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifier Designed specifically for the Pan European Digital Extended EGSM base station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt supply and requires input power. Specified 26 Volt and 25 Characteristics: C ...
Page 2
... RF MHW930 2 V bias Figure 1. MHW930 Internal Diagram RF OUT MOTOROLA RF DEVICE DATA ...
Page 3
... BSC 24.26 BSC P 0.008 0.012 0.20 0.31 Q 0.151 0.161 3.84 4.09 R 0.685 0.705 17.40 17.91 S 0.598 0.612 15.19 15.55 V 0.155 BSC 3.94 BSC W 0.355 BSC 9.02 BSC Y 0.210 REF 5.33 REF STYLE 1: PIN 1. RF INPUT 2. +DC (BIAS) 3. +DC (SUPPLY) 4. +DC (SUPPLY OUTPUT CASE: GROUND Mfax is a trademark of Motorola, Inc. MHW930 MHW930/D 3 ...