upc2711t Renesas Electronics Corporation., upc2711t Datasheet

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upc2711t

Manufacturer Part Number
upc2711t
Description
3 Ghz Silicon Mmic Wide-band Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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FEATURES
• WIDE FREQUENCY RESPONSE: 3 GHz
• HIGH GAIN: 15 dB (UPC2708T)
• SATURATED OUTPUT POWER: +10 dBm (UPC2708T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2708T and UPC2711T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
SYMBOLS
CHANGE OVER TEMPERATURE
RL
ISOL
P
P
RL
R
I
G
NF
CC
f
SAT
G
1dB
G
U
OUT
TH
S
IN
S
T
Circuit Current (no signal)
Small Signal Gain
Upper Limit Operating Frequency
(The gain at f
Gain Flatness, f = 0.1 - 2.6 GHz
Saturated Output Power
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss
Output Return Loss
Isolation
Gain-Temperature Coefficient
Thermal Resistance (Junction to Ambient)
PARAMETERS AND CONDITIONS
U
is 3 dB down from the gain at 0.1 GHz)
f = 0.1 - 2.5 GHz
PACKAGE OUTLINE
PART NUMBER
WIDE-BAND AMPLIFIER
(T
A
3 GHz SILICON MMIC
= 25 C, f = 1 GHz, V
UNITS
dB/ C
GHz
dBm
dBm
CC
C/W
mA
dB
dB
dB
dB
dB
dB
= 5 V)
20
15
10
5
0
California Eastern Laboratories
MIN
2.7
7.5
13
18
20
16
0
8
UPC2708
UPC2711
UPC2708T
0.5
GAIN vs. FREQUENCY
+0.002
TYP
T06
2.9
7.5
6.5
26
15
10
11
20
23
0.8
Frequency, f (GHz)
1.0
MAX
18.5
200
33
1.5
8
UPC2708T
UPC2711T
2.0
MIN
2.7
11
20
25
-2
9
9
UPC2711T
2.5
-0.002
TYP
T06
2.9
12
13
25
12
30
-4
0.8
1
5
3.0
MAX
16.5
200
6.5
15

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upc2711t Summary of contents

Page 1

... SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic inte- grated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/ measurement equipment ...

Page 2

... UPC2708T, UPC2711T ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC P Input Power Power Dissipation T T Operating Temperature OP T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted 1.6 mm epoxy glass PWB (T TYPICAL PERFORMANCE CURVES CIRCUIT CURRENT vs ...

Page 3

... INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY 5 -10 RL out - -30 -40 0.1 0.3 1.0 Frequency, f (GHz) UPC2711T ISOLATION vs. FREQUENCY 5 -10 -20 -30 -40 -50 0.1 0.3 1.0 Frequency, f (GHz) UPC2711T POWER vs. FREQUENCY 5 SAT 1dB -10 -15 0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency, f (GHz) X: Typical SSB Third Order intercept Point 3.0 3.0 3.5 ...

Page 4

... UPC2708T, UPC2711T TYPICAL PERFORMANCE CURVES UPC2708T OUTPUT POWER vs. INPUT POWER AND TEMPERATURE 1 5 -10 -15 -20 -30 -25 -20 -15 -10 Input Power, P (dBm) IN UPC2708T OUTPUT POWER vs. INPUT POWER AND VOLTAGE 1 5 -10 -15 -20 -30 -25 -20 -15 -10 Input Power NOISE FIGURE vs ...

Page 5

... UPC2711T FREQUENCY S 11 GHz MAG ANG 0.10 0.115 -13.9 0.20 0.110 -22.1 0.30 0.104 -31.2 0.40 0.096 -41.7 0.50 0.085 -52.0 0.60 0.080 -58.8 0.70 0.071 -74.8 0.80 0.056 -88.7 0.90 0.044 -103.9 1.00 0.030 -125.2 1.20 0.028 149.4 1.40 0.060 96 ...

Page 6

... Patrick Henry Drive Santa Clara, CA 95054-1817 UPC2711T (Top View) (Bottom View Note: Package Markings: 4. OUTPUT C1D - UPC2708T 5. GND C1G - UPC2711T 3. 1.0 1.0 MIN MIN · · (408) 988-3500 Telex 34-6393/FAX (408) 988-0279 (Units in mm ...

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