upc8230tu Renesas Electronics Corporation., upc8230tu Datasheet

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upc8230tu

Manufacturer Part Number
upc8230tu
Description
Sige C Low Noise Amplifier For Gps
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
upc8230tu-E2
Manufacturer:
NEC
Quantity:
20 000
Document No. PU10612EJ01V0DS (1st edition)
Date Published April 2006 NS CP(N)
Printed in Japan
DESCRIPTION
amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the
sensitivity of GPS receiver. In addition, the
reduce external components and system size.
FEATURES
• Low noise
• High gain
• Low current consumption
• Built-in power-saving function
• High-density surface mounting : 8-pin lead-less minimold package (2.0 × 2.0 × 0.5 mm)
• Included output matching circuit
• Included very robust bandgap regulator (Small V
• Included protection circuits for ESD
APPLICATION
• Low noise amplifier for GPS
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
μ
PC8230TU-E2
Part Number
Remark To order evaluation samples, contact your nearby sales office.
The
The package is 8-pin lead-less minimold suitable for surface mount.
This IC is manufactured using our UHS4 (Ultra High Speed Process) SiGe:C bipolar process.
μ
PC8230TU is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise
Part number for sample order:
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
PC8230TU-E2-A
Order Number
SiGe:C LOW NOISE AMPLIFIER FOR GPS
: NF = 0.85 dB TYP. @ f
: G
: I
8-pin lead-less minimold
(Pb-Free)
CC
P
= 18.5 dB TYP. @ f
= 6.0 mA TYP. @ V
BIPOLAR ANALOG INTEGRATED CIRCUIT
μ
Package
PC8230TU
μ
DATA SHEET
PC8230TU which is included output matching circuit contributes to
CC
and T
in
A
in
CC
dependence)
= 1 575 MHz
= 1 575 MHz
Marking
= 3.0 V
8230
• 8 mm wide embossed taping
• Pin 5, 6, 7, 8 indicates pull-out direction of tape
• Qty 5 kpcs/reel
μ
Supplying Form
PC8230TU
2006

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upc8230tu Summary of contents

Page 1

SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION μ The PC8230TU is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC ...

Page 2

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Power-Saving Voltage V Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-side ...

Page 3

ELECTRICAL CHARACTERISTICS (T = +25° 3 575 MHz, unless otherwise specified Parameter Symbol Circuit Current I Power Gain G Noise Figure NF Input 3rd Order Distortion Intercept IIP ...

Page 4

TYPICAL CHARACTERISTICS (T A CIRCUIT CURRENT vs. SUPPLY VOLTAGE +85° +25°C 4 –40° 2.0 2.5 3.0 3.5 Supply Voltage V (V) CC POWER GAIN vs. FREQUENCY 24 ...

Page 5

POWER GAIN vs. SUPPLY VOLTAGE –40° +25°C 16 +85° 575 MHz in 14 2.4 2.6 2.8 3.0 3.2 3.4 Supply Voltage V (V) CC OUTPUT POWER ...

Page 6

S-PARAMETERS (T = +25° –FREQUENCY 11 1:1 575 MHz 1 START 100.000 000 MHz STOP 4 000.000 000 MHz INPUT RETURN LOSS vs. FREQUENCY 0 –5 –10 –15 –20 –25 – 000 1 500 ...

Page 7

PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT: mm) (Top View) 2.0±0 8230 Remark ( ) : Reference value (Bottom View) (0.65) (0.6) (0. (0.25) (0.25) (0.75 Data Sheet PU10612EJ01V0DS ...

Page 8

NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with ...

Page 9

The information in this document is current as of April, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

Page 10

For further information, please contact NEC Compound Semiconductor Devices Hong Kong Limited E-mail: contact@ncsd-hk.necel.com Hong Kong Head Office TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 Korea Branch Office TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California ...

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