upc8231tk Renesas Electronics Corporation., upc8231tk Datasheet

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upc8231tk

Manufacturer Part Number
upc8231tk
Description
Sige C Low Noise Amplifier For Gps/mobile Communications
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. PU10613EJ01V0DS (1st edition)
Date Published April 2006 NS CP(N)
Printed in Japan
DESCRIPTION
amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain
characteristics. This device is enabled in the frequency range from 1.5 to 2.4 GHz by modifying the external matching
circuit.
FEATURES
• Low noise
• High gain
• Low current consumption
• Built-in power-saving function
• High-density surface mounting
• Included very robust bandgap regulator (Small V
• Included protection circuits for ESD
APPLICATION
• Low noise amplifier for GPS and mobile communications
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
μ
PC8231TK-E2
Remark To order evaluation samples, contact your nearby sales office.
Part Number
The
The package is 6-pin lead-less minimold, suitable for surface mount.
This IC is manufactured using our UHS4 (Ultra High Speed Process) SiGe:C bipolar process.
μ
PC8231TK is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise
Part number for sample order:
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
PC8231TK-E2-A
Order Number
FOR GPS/MOBILE COMMUNICATIONS
SiGe:C LOW NOISE AMPLIFIER
6-pin lead-less minimold
(1511 PKG) (Pb-Free)
: NF = 0.8 dB TYP. @ f
: G
: I
: 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)
BIPOLAR ANALOG INTEGRATED CIRCUIT
CC
μ
P
PC8231TK
= 20 dB TYP. @ f
= 3.8 mA TYP. @ V
Package
DATA SHEET
CC
and T
A
dependence)
in
Marking
in
= 1 575 MHz
CC
= 1 575 MHz
6K
= 3.0 V
• 8 mm wide embossed taping
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
μ
PC8231TK
Supplying Form
2006

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upc8231tk Summary of contents

Page 1

SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION μ The PC8231TK is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain ...

Page 2

PIN CONNECTIONS (Top View INTERNAL BLOCK DIAGRAM INPUT GND Power Save 2 (Bottom View Bias 3 4 Data Sheet PU10613EJ01V0DS μ PC8231TK Pin No. ...

Page 3

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Power-Saving Voltage V Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-side copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING ...

Page 4

ELECTRICAL CHARACTERISTICS (T = +25° 3 575 MHz, unless otherwise specified Parameter Symbol Circuit Current I Power Gain G Noise Figure NF Input 3rd Order Distortion Intercept IIP ...

Page 5

TYPICAL CHARACTERISTICS (T A CIRCUIT CURRENT vs. SUPPLY VOLTAGE +85° +25°C –40° 2.5 3.5 2.0 3.0 Supply Voltage V (V) CC POWER GAIN vs. FREQUENCY ...

Page 6

POWER GAIN vs. SUPPLY VOLTAGE –40° +25°C 18 +85° 575 MHz in 14 2.4 2.6 2.8 3.0 3.2 Supply Voltage V (V) CC OUTPUT POWER vs. INPUT POWER ...

Page 7

S-PARAMETERS (T = +25° –FREQUENCY 11 1 START 100.000 000 MHz STOP 4 000.000 000 MHz INPUT RETURN LOSS vs. FREQUENCY 0 –5 –10 –15 –20 –25 3 000 0 500 1 000 1 500 2 ...

Page 8

APPLIED CIRCUIT EXAMPLE C1 L1 INPUT EXTERNAL PARTS CHART Symbol Parts L1 Chip Inductor L2 Chip Inductor L3 Chip Inductor C1 Chip Capacitor C2 Chip Capacitor C3 Chip Capacitor C4 Chip Capacitor C5 Chip Capacitor R1 ...

Page 9

PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511 PKG) (UNIT: mm) (Top View) (Bottom View) 1.1±0.1 0.2±0.1 0.9±0.1 1.3±0.05 Data Sheet PU10613EJ01V0DS μ PC8231TK 9 ...

Page 10

NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with ...

Page 11

The information in this document is current as of April, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

Page 12

For further information, please contact NEC Compound Semiconductor Devices Hong Kong Limited E-mail: contact@ncsd-hk.necel.com Hong Kong Head Office TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 Korea Branch Office TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California ...

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