upc8218t5a Renesas Electronics Corporation., upc8218t5a Datasheet - Page 4

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upc8218t5a

Manufacturer Part Number
upc8218t5a
Description
Silicon Rf Power Amplifier Ic For 1.9 Ghz Phs
Manufacturer
Renesas Electronics Corporation.
Datasheet

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ELECTRICAL CHARACTERISTICS (f = 1.9 GHz, V
specified, using our standard test fixture)
4
All Part (Driver Part + 2 Stage PA Part, Q1+Q2+Q3)
Gate Voltage Adjusted Range
Power Added Efficiency
Operation Current Consumption
Input Return Loss
Output Return Loss
Output Power
Power Gain
Liner Gain
Adjacent Channel Power 1
Occupied Band Width
2nd Harmonics Frequency Level
3rd Harmonics Frequency Level
Gain 1 dB Compression Output
Power
Driver Part (Q1)
Circuit Current
Power Gain
Isolarion
Input Return Loss
Output Return Loss
Gain 1 dB Compression Output
Power
Saturated Output Power
Parameter
Symbol
P
P
P
P
P
OBW
RL
RL
adj (600)
adj (900)
η
RL
O (1 dB)
RL
O (1 dB)
V
P
ISL
G
2f
3f
I
G
O (sat)
G
I
CC
add
op
GS
out
out
P
L
P
out
0
0
in
in
P
P
P
P
P
P
P
No RF Signal
P
P
Data Sheet PU10480EJ01V0DS
in
in
in
in
in
in
in
in
in
= −19 dBm, P
= −20 dBm
= −19 dBm
= −20 dBm
= −19 dBm,
= −19 dBm,
= −19 dBm
= −30 dBm
= −5 dBm
Test Conditions
600 kHz
900 kHz
out
CC
= 20.5 dBm
= V
DS
= 3.0 V, T
A
MIN.
20.5
39.5
1.2
= +25°C, unless otherwise
250.0
TYP.
25.0
40.5
21.0
21.0
32.0
10.5
10.0
10.0
150
−62
−70
−44
−60
1.8
8.5
23
8
3
µ
270.0
MAX.
PC8218T5A
175
−55
−60
2.3
dBm
dBm
dBm
dBm
Unit
dBc
dBc
kHz
dBc
dBc
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
%
V

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