upc3223tb Renesas Electronics Corporation., upc3223tb Datasheet

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upc3223tb

Manufacturer Part Number
upc3223tb
Description
5 V, Silicon Mmic Medium Output Power Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. PU10491EJ01V0DS (1st edition)
Date Published May 2004 CP(K)
Printed in Japan
DESCRIPTION
our 30 GHz f
FEATURES
• Wideband response : f
• Medium output power : P
• High linearity
• Power gain
• Supply voltage
• Port impedance
APPLICATION
• IF amplifiers in DBS converters etc.
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
PC3223TB-E3
Remark To order evaluation samples, contact your nearby sales office.
The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Part number for sample order: PC3223TB
max
UHS0 (Ultra High Speed Process) silicon bipolar process.
6-pin super minimold
: P
: P
: G
: P
: G
: V
: input/output 50
u
O (sat)
O (sat)
O (1 dB)
O (1 dB)
CC
P
P
= 3.2 GHz TYP. @ 3 dB bandwidth
= 23.0 dB TYP. @ f = 1.0 GHz
= 23.0 dB TYP. @ f = 2.2 GHz
MEDIUM OUTPUT POWER AMPLIFIER
= 4.5 to 5.5 V
Package
= +12.0 dBm @ f = 1.0 GHz
= +9.0 dBm @ f = 2.2 GHz
= +6.5 dBm @ f = 1.0 GHz
= +5.0 dBm @ f = 2.2 GHz
BIPOLAR ANALOG INTEGRATED CIRCUIT
5 V, SILICON MMIC
DATA SHEET
Marking
C3J
Embossed tape 8 mm wide
1, 2, 3 pins face the perforation side of tape
Qty 3 kpcs/reel
Supplying Form
PC3223TB
NEC Compound Semiconductor Devices 2004

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upc3223tb Summary of contents

Page 1

MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz f UHS0 (Ultra High Speed Process) silicon bipolar process. max FEATURES • Wideband ...

Page 2

PIN CONNECTIONS (Top View PRODUCT LINE- V-BIAS SILICON MMIC MEDIUM OUTPUT AMPLIFIER ( GHz out O(sat) Part No. ...

Page 3

PIN EXPLANATIONS PIN Applied Pin Voltage Pin Name No. Voltage (V) 1 INPUT – 4 OUTPUT Voltage as same through external inductor 6 V 4 GND Note Pin Voltage is ...

Page 4

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Total Circuit Current I Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-sided copper-clad 50 RECOMMENDED OPERATING RANGE Parameter Symbol Supply Voltage V Operating ...

Page 5

OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY ( out S Parameter Symbol Output Intercept Point OIP = Test Conditions f = 1.0 GHz 3 ...

Page 6

TEST CIRCUIT 100 pF The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type Chip Capacitor ...

Page 7

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN C1 COMPONENT LIST Notes Value 100 000 100 ...

Page 8

TYPICAL CHARACTERISTICS (T CIRCUIT CURRENT vs. SUPPLY VOLTAGE 30 No input signal 85˚ 25˚ Supply Voltage V (V) CC POWER ...

Page 9

POWER GAIN vs. FREQUENCY 5 40˚ 85˚ 25˚ 0.1 1.1 2.1 3.1 4.1 Frequency f (GHz) ISOLATION vs. FREQUENCY 0 V ...

Page 10

OUTPUT POWER vs. INPUT POWER 1.0 GHz T = 25˚ 5 Input Power P (dBm) in ...

Page 11

S-PARAMETERS ( FREQUENCY 11 S FREQUENCY 5.0 V) out 1.0 GHz 2.2 GHz 1.0 GHz 2.2 GHz Data Sheet PU10491EJ01V0DS PC3223TB 11 ...

Page 12

PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 12 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet PU10491EJ01V0DS PC3223TB ...

Page 13

NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with ...

Page 14

The information in this document is current as of May, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

Page 15

For further information, please contact NEC Compound Semiconductor Devices, Ltd. E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong ...

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