upc3232tb Renesas Electronics Corporation., upc3232tb Datasheet

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upc3232tb

Manufacturer Part Number
upc3232tb
Description
5 V, Silicon Germanium Mmic Medium Output Power Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. PU10597EJ01V0DS (1st edition)
Date Published May 2006 NS CP(K)
Printed in Japan
DESCRIPTION
This IC is manufactured using our 50 GHz f
FEATURES
• Low current
• Medium output power
• High linearity
• Power gain
• Gain flatness
• Noise figure
• Supply voltage
• Port impedance
APPLICATIONS
• IF amplifiers in LNB for DBS converters etc.
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
µ
PC3232TB-E3
The
Remark
Part Number
µ
PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
To order evaluation samples, please contact your nearby sales office
Part number for sample order:
µ
PC3232TB-E3-A 6-pin super minimold
Order Number
MEDIUM OUTPUT POWER AMPLIFIER
: I
: P
: P
: P
: P
: G
: G
:
: NF = 4.1 dB TYP. @ f = 2.2 GHz
: V
: input/output 50 Ω
: NF = 4 dB TYP. @ f = 1.0 GHz
5 V, SILICON GERMANIUM MMIC
(Pb-Free)
CC
G
O (sat)
O (sat)
O (1 dB)
O (1 dB)
CC
P
P
P
= 26.0 mA TYP.
= 32.8 dB MIN. @ f = 1.0 GHz
= 33.5 dB MIN. @ f = 2.2 GHz
= 4.5 to 5.5 V
= 1.0 dB TYP. @ f = 1.0 to 2.2 GHz
BIPOLAR ANALOG INTEGRATED CIRCUIT
Package
= +15.5 dBm TYP. @ f = 1.0 GHz
= +12.0 dBm TYP. @ f = 2.2 GHz
max
= +11.0 dBm TYP. @ f = 1.0 GHz
= +8.5 dBm TYP. @ f = 2.2 GHz
µ
PC3232TB
UHS2 (Ultra High Speed Process) SiGe bipolar process.
DATA SHEET
Marking
C3S
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
µ
Supplying Form
PC3232TB
2005, 2006

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upc3232tb Summary of contents

Page 1

V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION µ The PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz f FEATURES • Low ...

Page 2

PIN CONNECTIONS (Top View) (Top View PRODUCT LINE- V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (T = +25° GHz out P ...

Page 3

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Total Circuit Current I Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED ...

Page 4

ELECTRICAL CHARACTERISTICS (T Parameter Symbol Circuit Current I Power Gain 1 G Power Gain 2 G Power Gain 3 G Power Gain 4 G Power Gain 5 G Power Gain 6 G ∆ Gain Flatness K factor ...

Page 5

TEST CIRCUIT C4 1 000 pF C1 100 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type R1 ...

Page 6

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C1 COMPONENT LIST Value Size 560 Ω R1 1005 1005 1005 C1 100 pF 1608 1608 C3 000 pF 1005 ...

Page 7

TYPICAL CHARACTERISTICS (T CIRCUIT CURRENT vs. SUPPLY VOLTAGE 35 No Input Signal +85˚ –40˚ Supply Voltage V (V) CC POWER GAIN vs. FREQUENCY 40 V ...

Page 8

OUTPUT POWER vs. INPUT POWER 5 1.0 GHz 4 –5 –10 –15 –20 –50 –40 –30 –20 Input Power P (dBm) in NOISE FIGURE vs. FREQUENCY 7.0 6.5 ...

Page 9

OUTPUT POWER, IM vs. INPUT POWER 000 MHz 001 MHz P out 10 0 –10 –20 – –40 –50 –60 –70 –45 –40 –35 –30 –25 –20 –15 –10 ...

Page 10

S-PARAMETERS (T = +25° −FREQUENCY S 11 START : 100.000 000 MHz −FREQUENCY S 22 START : 100.000 000 MHz 10 = −35 dBm 5 81.254 Ω 4 ...

Page 11

S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html Data Sheet ...

Page 12

PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 12 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet PU10597EJ01V0DS µ PC3232TB ...

Page 13

NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with ...

Page 14

The information in this document is current as of May, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

Page 15

For further information, please contact NEC Compound Semiconductor Devices Hong Kong Limited E-mail: contact@ncsd-hk.necel.com Hong Kong Head Office TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 Korea Branch Office TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California ...

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