upc3240tb Renesas Electronics Corporation., upc3240tb Datasheet

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upc3240tb

Manufacturer Part Number
upc3240tb
Description
3.3 V, Silicon Mmic Wide Band Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
upc3240tb-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
upc3240tb-E3-A
Manufacturer:
RENESAS/瑞萨
Quantity:
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Document No. PU10751EJ01V0DS (1st edition)
Date Published February 2009 NS
Printed in Japan
DESCRIPTION
FEATURES
• Low current
• High linearity
• Power gain
• Gain flatness
• Noise figure
• Supply voltage
• Port impedance
APPLICATIONS
• IF amplifiers in DBS LNB, other L-band amplifiers, etc.
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
μ
PC3240TB-E3
The
This device exhibits low noise figure and high power gain characteristics.
This IC is manufactured using our UHS0 (Ultra High Speed Process) bipolar process.
Remark
Part Number
μ
PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
To order evaluation samples, please contact your nearby sales office.
Part number for sample order:
μ
PC3240TB-E3-A 6-pin super minimold
Order Number
3.3 V, SILICON MMIC WIDE BAND AMPLIFIER
: I
: P
: P
: G
: G
:
: NF = 4.3 dB TYP. @ f = 1.0 GHz
: NF = 4.5 dB TYP. @ f = 2.2 GHz
: V
: input/output 50 Ω
Δ
(Pb-Free)
CC
G
O (1 dB)
O (1 dB)
CC
P
P
P
= 13 mA TYP.
= 25 dB TYP. @ f = 1.0 GHz
= 24.5 dB TYP. @ f = 2.2 GHz
= 3.0 to 3.6 V
= 1.0 dB TYP. @ f = 1.0 to 2.2 GHz
BIPOLAR ANALOG INTEGRATED CIRCUIT
Package
= +1 dBm TYP. @ f = 1.0 GHz
= −4 dBm TYP. @ f = 2.2 GHz
μ
PC3240TB
DATA SHEET
Marking
C3W
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
μ
Supplying Form
PC3240TB
2009

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upc3240tb Summary of contents

Page 1

V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION μ The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics. This IC is manufactured using ...

Page 2

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View Remark A NC pin is non-connection in the mold package. (When NC pin is open state, it will get influences of ...

Page 3

ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage V Total Circuit Current I Power Dissipation P Operating Ambient Temperature T Storage Temperature T Input Power P Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED ...

Page 4

ELECTRICAL CHARACTERISTICS (T Parameter Symbol Circuit Current I Power Gain 1 G Power Gain 2 G Power Gain 3 G Power Gain 4 G Gain 1 dB Compression Output Power dB) Gain 1 dB Compression Output ...

Page 5

TEST CIRCUIT C1 100 pF IN Microstrip Line The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type C1, C2 Chip Capacitor ...

Page 6

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN Top View Mounting direction COMPONENT LIST Value Size C1, C2 100 pF 1608 C3 1 000 pF 1005 C4 1 000 pF Feed-through Capacitor C4: Feed-through ...

Page 7

TYPICAL CHARACTERISTICS (T CIRCUIT CURRENT vs. SUPPLY VOLTAGE 20 No Input Signal +85° 0.5 1.0 1.5 2.0 2.5 3.0 Supply Voltage V (V) CC POWER GAIN ...

Page 8

POWER GAIN vs. FREQUENCY –40 dBm –40° +25°C 23 +85° 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ...

Page 9

OUTPUT POWER vs. INPUT POWER 1.0 GHz –5 3.3 V –10 –15 –20 3.0 V –25 –30 –50 –45 –40 –35 –30 –25 –20 –15 –10 Input Power P (dBm) ...

Page 10

OUTPUT POWER, IM vs. INPUT POWER OIP = +11.1 dBm out –10 –20 –30 IM –40 –50 IIP = –13.8 dBm 3 – – 000 MHz –80 f2 ...

Page 11

OUTPUT POWER, IM vs. INPUT POWER 3 30 OIP = +13.2 dBm out –10 –20 – –40 –50 IIP = –12.5 dBm 3 – –40°C A – 000 ...

Page 12

OUTPUT POWER, IM vs. INPUT POWER out –10 – –30 –40 –50 V – 000 MHz 001 MHz –70 –45 –40 –35 –30 –25 –20 Input Power ...

Page 13

OUTPUT POWER, 2f0 vs. INPUT POWER out –10 –20 –30 2f0 –40 –50 V – 000 MHz –70 –45 –40 –35 –30 –25 –20 Input Power P (dBm) in OUTPUT POWER, 2f ...

Page 14

S-PARAMETERS (T = +25° −FREQUENCY S 11 START : 100 MHz −FREQUENCY S 22 START : 100 MHz Remarks 1. Measured on the test circuit of evaluation board. 2. The graphs indicate nominal characteristics −40 ...

Page 15

S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and ...

Page 16

PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 16 2.1±0.1 1.25±0.1 0.1 MIN. Data Sheet PU10751EJ01V0DS μ PC3240TB ...

Page 17

NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with ...

Page 18

The information in this document is current as of February, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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