mt46h32m32lfcm Micron Semiconductor Products, mt46h32m32lfcm Datasheet
mt46h32m32lfcm
Manufacturer Part Number
mt46h32m32lfcm
Description
1gb X16, X32 Mobile Ddr Sdram At Addendum
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H32M32LFCM.pdf
(4 pages)
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Mobile DDR SDRAM Addendum
MT46H64M16LF – 16 Meg x 16 x 4 banks
MT46H32M32LF – 8 Meg x 32 x 4 banks
Features
• V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data—one mask
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• On-chip temperature sensor to control self refresh
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh ≤ +85°C
• 16ms refresh ≤ +105°C
Notes: 1. Contact factory for availability of BL16.
Table 2:
PDF: 09005aef82c1aa70/Source: 09005aef82c1a99b
1gb_ddr_mobile_sdram_t48m_AT_addendum__1.fm - Rev. B 05/08 EN
Architecture
Configuration
Refresh count
Row addressing
Column addressing
architecture; two data accesses per clock cycle
aligned with data for WRITEs
per byte
rate
DD/
2
2. Self refresh only supported ≤ +85°C.
V
DD
Q = 1.70–1.95V
Configuration Addressing
Products and specifications discussed herein are subject to change by Micron without notice.
16 Meg x 16 x 4 banks
2
64 Meg x 16
16K (A0–A13)
2
1K (A0–A9)
8K
1
1Gb: x16, x32 Mobile DDR SDRAM AT Addendum
1
Options
• V
• Configuration
• Row-size option
• Plastic “green” package
• Timing – cycle time
• Operating temperature range
• Revision
Notes: 1. Contact factory for availability.
Table 1:
– 1.8V/1.8V
– 64 Meg x 16 (16 Meg x 16 x 4 banks)
– 32 Meg x 32 (8 Meg x 32 x 4 banks)
– JEDEC-standard option
– Reduced page-size option
– 60-ball VFBGA (10mm x 11.5mm)
– 90-ball VFBGA (10mm x 13mm)
– 5ns @ CL = 3
– 5.4ns @ CL = 3
– 6ns @ CL = 3
– 7.5ns @ CL = 3
– Automotive (–40°C to +105°C)
Speed Grade
8 Meg x 32 x 4 banks
DD
32 Meg x 32
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8K (A0–A12)
/V
1K (A0–A9)
2. Only available for x16 configuration.
3. Only available for x32 configuration.
-54
-75
-5
-6
DD
8K
Q
Key Timing Parameters (CL = 3)
Clock Rate (MHz)
200
185
166
133
Reduced Page-Size Option
©2007 Micron Technology, Inc. All rights reserved.
1
8 Meg x 32 x 4 banks
16K (A0–A13)
32 Meg x 32
512 (A0–A8)
3
2
Access Time
8K
Marking
5.0ns
5.0ns
5.5ns
6.0ns
Features
64M16
32M32
CM
-54
-75
LG
CK
AT
LF
-5
-6
:A
H
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mt46h32m32lfcm Summary of contents
Page 1
Mobile DDR SDRAM Addendum MT46H64M16LF – 16 Meg banks MT46H32M32LF – 8 Meg banks Features • 1.70–1.95V DD/ DD • Bidirectional data strobe per byte of data (DQS) ...
Page 2
Figure 1: Mobile DDR Part Numbering Micron Technology Product family 46 = Mobile DDR SDRAM Operating voltage H = 1.8/1.8V Configuration 64 Meg Meg x 32 Addressing LF = Mobile standard addressing LG = Reduced page-size option ...
Page 3
Electrical Specifications Table 3: I Specifications and Conditions (x16/x32) DD Refer to the standard product data sheet for applicable notes; V Parameter/Condition Precharge power-down standby current: All banks idle; CKE LOW HIGH ...
Page 4
Revision History Rev ...