lsi1013xt1g Leshan Radio Company, lsi1013xt1g Datasheet

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lsi1013xt1g

Manufacturer Part Number
lsi1013xt1g
Description
P-channel 1.8-v G-s Mosfet
Manufacturer
Leshan Radio Company
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LSI1013XT1G
Manufacturer:
LRC/乐山
Quantity:
20 000
Notes
d.
e.
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (diode conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
P-Channel 1.8-V (G-S) MOSFET
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board.
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Gate-Source ESD Protected: 2000 V
D High-Side Switching
D Low On-Resistance: 1.2 W
D Low Threshold: 0.8 V (typ)
D Fast Switching Speed: 14 ns
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
LSI1013XT1G
LSI1013XT3G
Displays, Memories
Device
ORDERING INFORMATION
a
Marking
J
J
b
b
b
b
= 150_C)
= 150_C)
B
B
for SC 75
for SC-75
for SC 89
for SC-89
Parameter
10000/Tape&Reel
3000/Tape&Reel
b
b
Shipping
b
A
= 25_C UNLESS OTHERWISE NOTED)
T
T
T
T
T
T
A
A
A
A
A
A
= 25_C
= 85_C
= 25_C
= 85_C
= 25_C
= 85_C
Symbol
T
J
ESD
V
V
I
P
P
, T
DM
I
I
I
GS
DS
D
D
S
D
D
stg
LESHAN RADIO COMPANY, LTD.
5 secs
-400
-300
-275
175
275
160
90
Source
Gate
LSI1013XT1G
−55 to 150
-1000
2000
"6
-20
M = Month Code
A = Specific Device Code
1
2
Steady State
MARKING DIAGRAM
1
-350
-275
-250
150
250
140
80
(Top View)
SC-89
B
3
2
Unit
mW
mW
1/6
3
mA
mA
_C
V
V
V
Drain

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lsi1013xt1g Summary of contents

Page 1

... 25_C 85_C 25_C 85_C stg ESD LESHAN RADIO COMPANY, LTD. LSI1013XT1G SC-89 Gate 1 Source 2 (Top View) MARKING DIAGRAM Specific Device Code M = Month Code 5 secs Steady State -20 "6 -350 -400 -300 -275 -1000 ...

Page 2

... d(on – – –200 mA –4 GEN d(off LESHAN RADIO COMPANY, LTD. LSI1013XT1G Min Typ –0.45 = "4.5 V " –0 85_C J = –4.5 V –700 = –350 mA 0.8 = –300 m A 1.2 = –150 m A 1.8 0.4 = –250 –0.8 GS 1500 = – ...

Page 3

... Q – Total Gate Charge (nC 2 1.8 V 2.0 2 800 1000 1.0 1.2 1.4 1.6 LESHAN RADIO COMPANY, LTD. LSI1013XT1G Transfer Characteristics 1000 T = –55_C J 25_C 800 600 400 200 0 0.0 0.5 1.0 1.5 2.0 V – Gate-to-Source Voltage (V) GS Capacitance 120 100 C 80 iss oss ...

Page 4

... BV vs. Temperature GSS – 100 T – Temperature (_C) J LSI1013XT1G On-Resistance vs. Gate-to-Source Voltage I = 350 200 – Gate-to-Source Voltage ( vs. Temperature GSS – 100 T – Temperature (_C) ...

Page 5

... UNLESS NOTED) A –2 – Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot –2 10 Square Wave Pulse Duration (sec) LESHAN RADIO COMPANY, LTD. LSI1013XT1G Notes Duty Cycle Per Unit Base = R ...

Page 6

... LESHAN RADIO COMPANY, LTD. SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. LSI1013XT1G 6/6 ...

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