ne5511279a-t1a Renesas Electronics Corporation., ne5511279a-t1a Datasheet

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ne5511279a-t1a

Manufacturer Part Number
ne5511279a-t1a
Description
Necs 7.5 V Uhf Band Rf Power Silicon Ld-mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. PU10322EJ01V0DS (1st edition)
Date Published June 2003 CP(K)
Printed in Japan
DESCRIPTION
transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and
housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added
efficiency at 900 MHz under the 7.5 V supply voltage.
FEATURES
• High output power
• High power added efficiency
• High linear gain
• Surface mount package
• Single supply
APPLICATIONS
• 460 MHz Radio Systems
• 900 MHz Radio Systems
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE5511279A-T1
NE5511279A-T1A
Remark To order evaluation samples, contact your nearby sales office.
The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Part number for sample order: NE5511279A
7.5 V OPERATION SILICON RF POWER LD-MOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
Package
79A
: P
: P
:
:
: G
: G
: 5.7
: V
add
add
out
out
DS
L
L
= 15.0 dB TYP. (f = 900 MHz, V
= 18.5 dB TYP. (f = 460 MHz, V
= 40.0 dBm TYP. (f = 900 MHz, V
= 40.5 dBm TYP. (f = 460 MHz, V
= 2.8 to 8.0 V
= 48% TYP. (f = 900 MHz, V
= 50% TYP. (f = 460 MHz, V
5.7
1.1 mm MAX.
DATA SHEET
Marking
W3
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 5 kpcs/reel
DS
DS
DS
DS
= 7.5 V, P
= 7.5 V, P
= 7.5 , P
= 7.5 V, P
DS
DS
SILICON POWER MOS FET
= 7.5 V, P
= 7.5 V, P
NE5511279A
in
in
in
= 27 dBm, I
= 25 dBm, I
in
= 5 dBm V, I
Supplying Form
= 5 dBm, I
in
in
= 27 dBm, I
= 25 dBm, I
NEC Compound Semiconductor Devices 2003
Dset
Dset
Dset
Dset
= 400 mA)
= 400 mA)
= 400 mA)
Dset
Dset
= 400 mA)
= 400 mA)
= 400 mA)

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ne5511279a-t1a Summary of contents

Page 1

... Part Number Package NE5511279A-T1 79A NE5511279A-T1A Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE5511279A Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...

Page 2

... Input Power + Ratings Unit Note tot 125 +125 C stg Test Conditions Duty Cycle 50 900 MHz 7 Data Sheet PU10322EJ01V0DS NE5511279A MIN. TYP. MAX. Unit 7.5 8 2.0 3.0 V 2.5 3 dBm ...

Page 3

... dBm 400 mA (RF OFF) add Dset Note 460 MHz 7.5 V, out dBm 400 mA (RF OFF) add Dset Note L Data Sheet PU10322EJ01V0DS NE5511279A MIN. TYP. MAX. Unit 100 nA 100 nA 1.0 1.5 2 C/W 2 38.5 40.0 dBm 2 15 ...

Page 4

... Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.csd-nec.com + 7 400 mA) DS Dset 5 P out 4 100 add out 4 100 add Data Sheet PU10322EJ01V0DS NE5511279A ...

Page 5

... PACKAGE DIMENSIONS 79A (UNIT: mm) 4.2 MAX. Source Gate 0.4±0.15 5.7 MAX. 79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Gate (Bottom View) 1.5±0.2 Source Gate Drain 3.6±0.2 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain Through Hole: 0.2 × 33 0.5 0.5 6.1 Data Sheet PU10322EJ01V0DS NE5511279A Drain 0.8 MAX. 5 ...

Page 6

... C or below : seconds : seconds : 3 times : 0.2%(Wt.) or below : 260 C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350 C or below : 3 seconds or less : 0.2%(Wt.) or below Data Sheet PU10322EJ01V0DS NE5511279A For soldering Condition Symbol IR260 VP215 WS260 HS350-P3 ...

Page 7

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for Data Sheet PU10322EJ01V0DS NE5511279A The M8E 00 0110 7 ...

Page 8

... TEL: +886-2-8712-0478 Korea Branch Office TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NE5511279A 0302-1 ...

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