ne5511279a-t1a-a California Eastern Laboratories, ne5511279a-t1a-a Datasheet

ne5511279a-t1a-a

Manufacturer Part Number

ne5511279a-t1a-a

Description

Nec S 7.5 V Uhf Band Rf Power Silicon Ld-mos Fet

Manufacturer

California Eastern Laboratories

Datasheet

1.NE5511279A-T1A-A.pdf (4 pages)

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APPLICATIONS

ELECTRICAL CHARACTERISTICS

Notes:

• UHF RADIO SYSTEMS

• CELLULAR REPEATERS

• TWO-WAY RADIOS

• FRS/GMRS

• FIXED WIRELESS

FEATURES

• HIGH OUTPUT POWER:

• HIGH POWER ADDED EFFICIENCY:

• HIGH LINEAR GAIN:

• SURFACE MOUNT PACKAGE:

• SINGLE SUPPLY:

SYMBOL

5.7 x 5.7 x 1.1 mm MAX

add

out

GSS

DSS

= 15.0 dB TYP., f = 900 MHz, V

= 18.5 dB TYP., f = 460 MHz, V

DC performance is 100% tested. RF performance is tested on several samples per wafer.

Wafer rejection criteria for standard devices is 1 reject for several samples.

add

out

DSS

= 40.5 dBm TYP., f = 460 MHz, V

= 2.8 to 8.0 V

= 40.0 dBm TYP., f = 900 MHz, V

= 48% TYP., f = 900 MHz, V

= 50% TYP., f = 460 MHz, V

Output Power

Drain Current

Power Added Efﬁciency

Linear Gain

Output Power

Drain Current

Power Added Efﬁciency

Linear Gain

Gate to Source Leak Current

Drain to Source Leakage Current

(Zero Gate Voltage Drain Current)

Gate Threshold Voltage

Thermal Resistance

Transconductance

Drain to Source Breakdown Voltage

PARAMETER

RF POWER SILICON LD-MOS FET

= 7.5 V,

NEC'

38.5

MIN

1.0

−

= 25°C)

TYP

40.0

15.0

40.5

2.75

18.5

7.5 V UHF BAND

2.5

1.5

2.3

−

OUTLINE DIMENSIONS

DESCRIPTION

NEC's NE5511279A is an N-Channel silicon power laterally

diffused MOSFET specially designed as the transmission

power ampliﬁer for 7.5 V radio systems. Die are manu-

factured using NEC's NEWMOS1 technology and housed in

a surface mount package. This device can deliver 40.0 dBm

output power with 48% power added efﬁciency at 900 MHz

using a 7.5 V supply voltage.

MAX

100

2.0

Gate

−

California Eastern Laboratories

4.2 MAX.

5.7 MAX.

UNIT

°C/W

dBm

Source

PACKAGE OUTLINE 79A

0.4±0.15

f = 900 MHz, V

f = 460 MHz, V

Channel to Case

DSQ

DSS

Drain

= 27 dBm,

= 5 dBm

= 25 dBm,

= 5 dBm

= 8.5 V

= 4.8 V, I

= 3.5 V, I

= 6.0 V

= 15 μA

= 400 mA (RF OFF)

TEST CONDITIONS

NE5511279A

(Units in mm)

= 1.5 mA

= 900 mA

= 7.5 V,

Gate

(Bottom View)

1.5±0.2

Source

3.6±0.2

0.8 MAX.

Drain

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ne5511279a-t1a-a Summary of contents

Page 1

... 7 DESCRIPTION NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power ampliﬁer for 7.5 V radio systems. Die are manu- factured using NEC's NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added efﬁ ...

Page 2

... RECOMMENDED OPERATING LIMITS °C) A SYMBOLS UNITS RATINGS °C 125 °C -55 to +125 ORDERING INFORMATION PART NUMBER NE5511279A-T1-A NE5511279A-T1A-A Drain (T = 25° out 4 100 η η add ...

Page 3

RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales ofﬁce. Soldering Method Infrared Reﬂow Peak temperature (package surface temperature) Time ...

Page 4

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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