BU2520AW Philips Semiconductors (Acquired by NXP), BU2520AW Datasheet - Page 4
BU2520AW
Manufacturer Part Number
BU2520AW
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.BU2520AW.pdf
(7 pages)
Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
Fig.9. Typical collector-emitter saturation voltage.
Fig.8. Typical base-emitter saturation voltage.
100
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
Fig.7. Typical DC current gain. h
1
1
0
1
0.1
0.1
0.1
VBESAT / V
VCESAT / V
hFE
V
V
BE
CE
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
sat = f (I
sat = f (I
1 V
parameter V
IC/IB =
1
1
5
4
3
C
C
); parameter I
); parameter I
IC / A
IC / A
IC / A
5 V
1
CE
10
10
C
C
FE
/I
/I
Tj = 25 C
Tj = 125 C
B
B
BU2520A
BU2520A
= f (I
BU2520A
IC/IB=
3
4
5
C
100
100
)
10
4
Fig.11. Typical collector-emitter saturation voltage.
Fig.10. Typical base-emitter saturation voltage.
Eoff = f (I
1.2
1.1
0.9
0.8
0.7
0.6
0.1
1000
10
100
1
1
Fig.12. Typical turn-off losses. T
10
0.1
0
VBESAT / V
VCESAT / V
0.1
Eoff / uJ
B
V
V
); parameter I
BE
CE
Tj = 25 C
Tj = 125 C
sat = f (I
sat = f (I
IC = 6 A
1
IC = 4 A
5 A
5 A
B
B
); parameter I
); parameter I
IB / A
6 A
IB / A
IB / A
C
1
2
; parameter frequency
1
8 A
Product specification
BU2520AW
3
C
C
j
Tj = 25 C
= 85˚C
Tj = 125 C
32 kHz
16 kHz
BU2520A
BU2520A
BU2520A
Rev 1.100
IC=
8 A
6 A
5 A
4 A
10
10
4