BU2520AW Philips Semiconductors (Acquired by NXP), BU2520AW Datasheet - Page 4

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BU2520AW

Manufacturer Part Number
BU2520AW
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
Fig.9. Typical collector-emitter saturation voltage.
Fig.8. Typical base-emitter saturation voltage.
100
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
Fig.7. Typical DC current gain. h
1
1
0
1
0.1
0.1
0.1
VBESAT / V
VCESAT / V
hFE
V
V
BE
CE
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
sat = f (I
sat = f (I
1 V
parameter V
IC/IB =
1
1
5
4
3
C
C
); parameter I
); parameter I
IC / A
IC / A
IC / A
5 V
1
CE
10
10
C
C
FE
/I
/I
Tj = 25 C
Tj = 125 C
B
B
BU2520A
BU2520A
= f (I
BU2520A
IC/IB=
3
4
5
C
100
100
)
10
4
Fig.11. Typical collector-emitter saturation voltage.
Fig.10. Typical base-emitter saturation voltage.
Eoff = f (I
1.2
1.1
0.9
0.8
0.7
0.6
0.1
1000
10
100
1
1
Fig.12. Typical turn-off losses. T
10
0.1
0
VBESAT / V
VCESAT / V
0.1
Eoff / uJ
B
V
V
); parameter I
BE
CE
Tj = 25 C
Tj = 125 C
sat = f (I
sat = f (I
IC = 6 A
1
IC = 4 A
5 A
5 A
B
B
); parameter I
); parameter I
IB / A
6 A
IB / A
IB / A
C
1
2
; parameter frequency
1
8 A
Product specification
BU2520AW
3
C
C
j
Tj = 25 C
= 85˚C
Tj = 125 C
32 kHz
16 kHz
BU2520A
BU2520A
BU2520A
Rev 1.100
IC=
8 A
6 A
5 A
4 A
10
10
4

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