mc68hc705v12 Freescale Semiconductor, Inc, mc68hc705v12 Datasheet - Page 127

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mc68hc705v12

Manufacturer Part Number
mc68hc705v12
Description
M68hc05-based Mcu Hc05 Freescale Semiconductor
Manufacturer
Freescale Semiconductor, Inc
Datasheet
12.8 EEPROM Programming Register
MC68HC705V12
NOTE:
Rev. 3.0
Address:
The contents and use of the programming register are discussed here.
Any reset including low-voltage reset (LVR) will abort any write in
progress when it is asserted. Data written to the addressed byte will,
therefore, be indeterminate.
CPEN — Charge Pump Enable Bit
ER1 ER0 — Erase Select Bits
Reset:
Read:
Write:
When set, CPEN enables the charge pump which produces the
internal programming voltage. This bit should be set with the EELAT
bit. The programming voltage will not be available until EEPGM is set.
The charge pump should be disabled when not in use. CPEN is
readable and writable and is cleared by reset.
ER1 and ER0 form a 2-bit field which is used to select one of three
erase modes: byte, block, or bulk.
selected for each bit configuration. These bits are readable and
writable and are cleared by reset.
Freescale Semiconductor, Inc.
Figure 12-4. EEPROM Programming Register (EEPROG)
For More Information On This Product,
$001C
BIt 7
0
0
Go to: www.freescale.com
EPROM and EEPROM
= Unimplemented
ER1
CPEN
0
0
1
1
6
0
Table 12-2. Erase Mode Select
5
0
0
ER0
0
1
0
1
ER1
4
0
No erase
Byte erase
Block erase
Bulk erase
Table 12-2
ER0
3
0
EEPROM Programming Register
Mode
EELAT
shows the modes
2
0
EPROM and EEPROM
Advance Information
EERC
1
0
EEPGM
Bit 0
0

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