tp3061 Freescale Semiconductor, Inc, tp3061 Datasheet

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tp3061

Manufacturer Part Number
tp3061
Description
Uhf Power Transistor Npn Silicon
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Power Transistor
digital applications. It incorporates high value emitter ballast resistors, gold
metallizations and offers a high degree of reliability and ruggedness. Including
double input and output matching networks, the TP3060 features high
impedances and is easy to match.
REV 6
©
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
NOTE:
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case (1) at 70 C Case
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Base Breakdown Voltage (I E = 60 mAdc)
Collector–Emitter Leakage (V CE = 26 V, R BE = 75 )
The TP3061 is designed for 960 MHz mobile base stations in both analog and
Motorola, Inc. 1994
Motorola Advanced Amplifier Concept Package
Oxynitride Passivation
Specified 26 Volts, 960 MHz Characteristics
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Derate above 25 C
(I C = 60 mA, R BE = 75 )
(I C = 6.0 mAdc)
1. Thermal resistance is determined under specified RF operating condition.
Output Power = 45 Watts
Minimum Gain = 8.0 dB
Efficiency = 50%
Characteristic
Characteristic
Rating
(T C = 25 C unless otherwise noted.)
V (BR)CBO
V (BR)CER
V (BR)EBO
Symbol
I CER
Symbol
Symbol
V CER
V CBO
V EBO
R JC
T stg
Min
P D
3.5
T J
40
48
I C
CASE 333A–02, STYLE 2
Typ
– 65 to +150
TP3061
45 W, 960 MHz
TRANSISTOR
NPN SILICON
Value
UHF POWER
Max
175
200
4.0
1.0
1.2
40
48
10
Max
Order this document
15
by TP3061/D
(continued)
Watts
TP3061
W/ C
Unit
Unit
Unit
Vdc
Vdc
Vdc
Adc
Vdc
Vdc
Vdc
C/W
mA
C
C
1

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tp3061 Summary of contents

Page 1

... SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor The TP3061 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching networks, the TP3060 features high impedances and is easy to match ...

Page 2

... out = 960 MHz) Load Mismatch ( out = 200 mA, Load VSWR = 5:1, at all phase angles) Overdrive ( 960 MHz) NOTE: 2. Value of “C ob ” is that of die only not measurable in TP3061 because of internal matching network ...

Page 3

... voltage, and frequency 200 mA 940 960 980 1000 f, FREQUENCY (MHz 200 mA 30 940 960 980 1000 f, FREQUENCY (MHz OHMS OHMS — — 3.95 + j3.55 3.7 + j5.2 TP3061 3 ...

Page 4

... L3 L2 C12 C11 C4 C5 C10 960 MHz C2 OUT TP3061 MR8923 MOTOROLA RF DEVICE DATA ...

Page 5

... H 6. EMITTER CASE 333A–02 ISSUE C Y14.5M, 1982. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.965 0.985 24.52 25.01 B 0.390 0.410 9.91 10.41 C 0.250 0.290 6.35 7.36 D 0.075 0.090 1.91 2.28 E 0.095 0.115 2.42 2.92 F 0.110 0.130 2.80 3.30 H 0.155 0.175 3.94 4.44 J 0.004 0.006 0.11 0.15 K 0.090 0.116 2.29 2.94 L 0.725 BSC 18.41 BSC N 0.415 0.435 10.55 11.04 Q 0.120 0.135 3.05 3.42 TP3061 5 ...

Page 6

... EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. ◊ TP3061 6 *TP3061/D* TP3061/D MOTOROLA RF DEVICE DATA ...

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