lmh6629sdx National Semiconductor Corporation, lmh6629sdx Datasheet
lmh6629sdx
Related parts for lmh6629sdx
lmh6629sdx Summary of contents
Page 1
... Max @ 25°C, ±0.45 µV/°C drift) allow pre- OS cision operation in both AC- and DC-coupled applications. The LMH6629 is fabricated in National Semiconductor’s pro- prietary SiGe process and is available in a 3mm x 3mm, 8 pin LLP package. Typical Application Circuit © 2010 National Semiconductor Corporation LMH6629 Features Specified for V ■ –3dB bandwidth ■ ...
Page 2
... Ordering Information Package Part Number LMH6629SD LLP-8 LMH6629SDE LMH6629SDX Connection Diagram www.national.com Package Marking Transport Media 1k Units Tape and Reel L6629 250 Units Tape and Reel 4.5k Units Tape and Reel 30068052 8-Pin LLP SDA088AD (Top View) 2 NSC Drawing SDA08A ...
Page 3
Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 4) Human Body Model Machine Model Charge-Device Model Positive Supply Voltage Differential Input Voltage Analog Input ...
Page 4
Symbol Parameter NF Noise Figure ANALOG I/O CMVR Input voltage range V Output voltage range O I Linear output current OUT V Input offset voltage OS Input offset voltage TcV OS temperature drift I Input bias current BI I Input ...
Page 5
Electrical Characteristics The following specifications apply for single supply with /2, COMP Pin = HI, unless otherwise noted. Boldface limits apply at the temperature extremes Symbol Parameter DYNAMIC PERFORMANCE SSBW Small signal −3dB ...
Page 6
Symbol Parameter I Input Bias Current BI I Input Offset Current OS Input offset voltage temperature drift C Input Capacitance CM R Input Resistance CM MISCELLANEOUS PARAMETERS Common Mode Rejection CMRR Ratio PSRR Power supply rejection ...
Page 7
Typical Performance Characteristics Unless otherwise specified ±2.5V Inverting Frequency Response Non-Inverting Frequency Response Non-Inverting Frequency Response with Varying V = 240Ω 100Ω COMP pin = HI OUT ...
Page 8
Non-Inverting Frequency Response with Varying V Frequency Response with Cap. Loading Frequency Response vs. R www.national.com Non-Inverting Frequency Response O 30068013 Frequency Response Cap. Loading 30068015 f 30068017 8 with Varying V O 30068014 30068016 Frequency Response vs ...
Page 9
Distortion vs. Swing Distortion vs. Gain 3 rd Order Intermodulation Distortion vs. Output Voltage Distortion vs. Swing 30068043 Distortion vs. Frequency 30068078 Input Noise Voltage vs. Frequency 30068096 9 30068077 30068044 30068062 www.national.com ...
Page 10
Input Noise Current vs. Frequency Output Source Current Large Signal Step Response www.national.com Open Loop Gain/Phase Response 30068063 Output Sink Current 30068057 Large Signal Step Response 30068073 10 30068060 30068058 30068074 ...
Page 11
Large Signal Step Response 30068064 Small Signal Step Response 30068075 Turn-On Waveform 30068025 Large Signal Step Response Small Signal Step Response Turn-Off Waveform 11 30068046 30068076 30068024 www.national.com ...
Page 12
Supply Current vs. Supply Voltage Input Bias Current vs. Supply Voltage (Typical Unit) www.national.com Offset Voltage vs. Supply Voltage (Typical Unit) 30068090 Input Offset Current vs. Supply Voltage (Typical Unit) 30068091 12 30068067 30068053 ...
Page 13
Application Section INTRODUCTION The LMH6629 is a very wide gain bandwidth, ultra low-noise voltage feedback operational amplifier. The excellent noise and bandwidth enables applications such as medical diag- nostic ultrasound, magnetic tape & disk storage and fiberop- tics to achieve ...
Page 14
When driven from a 0Ω source, such as the output amp, the non-inverting input of the LMH6629 should be iso- lated with at least a 25Ω series resistor. As seen in Figure 5, bias current cancellation is ...
Page 15
TOTAL INPUT NOISE vs. SOURCE RESISTANCE To determine maximum signal-to-noise ratios from the LMH6629, an understanding of the interaction between the amplifier’s intrinsic noise sources and the noise arising from its external resistors is necessary. Figure 6 FIGURE 6. Non-Inverting ...
Page 16
FIGURE 9. Voltage Noise Density vs. Source Resistance If bias current cancellation is not a requirement, then R need not equal this case, according to seq R ||R should be as low as possible to minimize noise. ...
Page 17
LOW-NOISE TRANSIMPEDANCE AMPLIFIER Figure 12 implements a high speed, single supply, low-noise Transimpedance amplifier commonly used with photo- diodes. The transimpedance gain is set by R FIGURE 12. 200MHz Transimpedance Amplifier Configuration Figure 13 shows the Noise Gain (NG) and ...
Page 18
FIGURE 15. Transimpedance Amplifier Equivalent Input Source Model From Figure 14 clear that with LMH6629’s extremely low noise characteristics, for R < 2.5kΩ, the noise performance F is entirely dominated by R thermal noise. Only above this F ...
Page 19
FIGURE 18. Low-Noise Magnetic Media Equalizer FIGURE 19. Equalizer Frequency Response LAYOUT CONSIDERATIONS National Semiconductor suggests the copper patterns on the evaluation board(s) for this product. These board(s) are also useful as an aid in device testing and characterization. As ...
Page 20
Physical Dimensions www.national.com inches (millimeters) unless otherwise noted 8-Pin LLP NS Package Number SDA08A 20 ...
Page 21
Notes 21 www.national.com ...
Page 22
... National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders. ...