mf1011b900y NXP Semiconductors, mf1011b900y Datasheet

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mf1011b900y

Manufacturer Part Number
mf1011b900y
Description
Microwave Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
Product specification
Supersedes data of December 1994
DATA SHEET
MF1011B900Y
Microwave power transistor
DISCRETE SEMICONDUCTORS
1997 Feb 18

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mf1011b900y Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 ...

Page 2

... Class PINNING - SOT448A PIN 1 collector 2 emitter 3 base connected to flange 1 handbook, 4 columns 3 2 Top view Fig.1 Simplified outline and symbol. WARNING 2 Product specification MF1011B900Y = common-base class (GHz) (V) (W) (dB) 1.09 50 800 6 DESCRIPTION ...

Page 3

... Feb 18 CONDITIONS open emitter open base open collector < note 1 MLC721 150 200 Product specification MF1011B900Y MIN. MAX 1750 65 +200 200 235 UNIT ...

Page 4

... Feb 18 PARAMETER 180 180 mA common-base test circuit as shown in Fig.3. f (GHz) 1.09 1.03 to 1.09 1.09 4 Product specification MF1011B900Y CONDITIONS MAX. = 120 C 0. 1%; 0.01 p notes 1and 2 CONDITIONS MAX 1 ...

Page 5

... Philips Semiconductors Microwave power transistor handbook, full pagewidth 18.5 40 input Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: = 10. r 1997 Feb 18 30 7.5 7.5 4.0 20.0 5.0 21.0 0. Fig.3 Broadband test circuit. 5 Product specification MF1011B900Y 30 1.6 4.0 10.0 1.0 5.9 10 output R/ MLC720 ...

Page 6

... Feb 18 DESCRIPTION MLC722 handbook, halfpage c (%) 200 250 P (W) i Class C pulse operation broadband test circuit as shown in Fig.3. 6 Product specification MF1011B900Y VALUE ORDERING INFORMATION 100 pF ATC 100A101kp50x mF Erie 1250-003 0 Tekelec 729-1 4 ...

Page 7

... (GHz) 1.03 1.09 1.15 handbook, full pagewidth + j 0 – 240 1997 Feb 18 (see Figs 6 and 7 0.22 + j0.19 0.23 + j0.12 0.19 + j0.06 1 0.5 0.2 1.03 GHz Z i 1.09 GHz 0.2 0.5 1.15 GHz 0.2 0.5 1 Fig.6 Input impedance as a function of frequency. 7 Product specification MF1011B900Y 0.14 0.12 0.09 j0. MLC724 j0.10 j0.08 ...

Page 8

... Philips Semiconductors Microwave power transistor handbook, full pagewidth 0 – 240 Fig.7 Optimum load impedance as a function of frequency. 1997 Feb 18 1 0.5 0.2 0.5 1.09 GHz 1.03 GHz 1.15 GHz Product specification MF1011B900Y MLC725 ...

Page 9

... Philips Semiconductors Microwave power transistor PACKAGE OUTLINE 3.3 2.9 Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. 1997 Feb 18 15.5 max 0.15 max 3 26 max seating plane 3.7 max 1 3 10.15 20.3 Fig.8 SOT448A. 9 Product specification MF1011B900Y 6 max 1.6 max 2.7 min 9.85 10.3 max 10.0 3 2.7 min MSA376 ...

Page 10

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 10 Product specification MF1011B900Y ...

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... Philips Semiconductors Microwave power transistor 1997 Feb 18 NOTES 11 Product specification MF1011B900Y ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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