bd9215f ROHM Co. Ltd., bd9215f Datasheet - Page 4

• Manufacturer Part Number: bd9215f
• Description: Dc-ac Inverter Control Ic
• Manufacturer: ROHM Co. Ltd.

〇
１. This product is produced with strict quality control, but might be destroyed if used beyond its absolute
２. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is
３. Mounting failures, such as misdirection or miscounts, may harm the device.
４. A strong electromagnetic field may cause the IC to malfunction.
５. The GND pin should be the location within ±0.3V compared with the PGND pin. ALL Pin (except BST1, BST2,
６. BD9215F, BD9215FV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown
７. When modifying the external circuit components, make sure to leave an adequate margin for external
８. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage
９. Under operating CP charge (under error mode) analog dimming and burst dimming are not operate.
10. Under operating Slow Start Control (SS is less than 1.5V), It does not operate Timer Latch.
12. The pin connected a connector need to connect to the resistor for electrical surge destruction.
13. This IC is a monolithic IC which (as shown is Fig-1) has P
NOTE FOR USE
11. By STB voltage, BD9215F, BD9215FV are changed to 2 states. Therefore, do not input STB pin voltage between
maximum ratings. Once IC is destroyed, failure mode will be difficult to determine, like short mode or
open mode. Therefore, physical protection countermeasure, like fuse is recommended in case operating
conditions go beyond the expected absolute maximum ratings.
within recommended operating range. The standard electrical characteristic values cannot be guaranteed
at other voltages in the operating ranges, however the variation will be small. When it is used in between
STB-UVLO Diode short etc., the IC can operate VCC
HN1, HN2,) Voltage should be under VCC voltage +0.3V
circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not
designed to protect the IC or guarantee its operation of the thermal shutdown circuit is assumed.
components actual value and tolerance as well as dispersion of the IC.
is switching. Make sure to leave adequate margin for this IC variation.
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can
result in mutual interference among circuits as well as operation faults and physical damage. Accordingly
you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than
the GND (P substrate) voltage to an input pin.
A P-N junction is formed from this P layer of each pin. For example, the relation between each potential
is as follows,
one state and the other state (0.8～2.0V).
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
(PinA)
Ｎ
P
＋
Parasitic diode
(PinA)
Resistance
Fig-1 Simplified structure of a Bipolar IC
GND
P substrate
N
Parasitic diode
GND
P
P
Other adjacent components
＋
(PinB)
REV. C
Parasitic diode
Ｎ
≧9V. Please refer to a Technical Note in detail.
(PinB)
C
Ｃ
Transistor (NPN)
B
P substrate
B
N
N
N
Ｂ
C
E
+
GND
GND
Ｃ
Ｅ
substrate and between the various pins.
Parasitic diode
E
N
GND
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