74abt16543bb NXP Semiconductors, 74abt16543bb Datasheet

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74abt16543bb

Manufacturer Part Number
74abt16543bb
Description
74abt16543 16-bit Latched Transceiver With Dual Enable 3-state
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
74abt16543bb,518
Manufacturer:
NXP Semiconductors
Quantity:
10 000
1. General description
2. Features
3. Quick reference data
The 74ABT16543 high-performance BiCMOS device combines low static and dynamic
power dissipation with high speed and high output drive.
The 74ABT16543 16-bit registered transceiver contains two sets of D-type latches for
temporary storage of data flowing in either direction. Separate latch enable (nLEAB,
nLEBA) and output enable (nOEAB, nOEBA) inputs are provided for each register to
permit independent control of data transfer in either direction. The outputs are guaranteed
to sink 64 mA.
Table 1:
T
Symbol Parameter
t
t
C
C
I
PLH
PHL
CC
amb
I
I/O
74ABT16543
16-bit latched transceiver with dual enable; 3-state
Rev. 04 — 26 May 2005
Two 8-bit octal transceivers with D-type latch
Live insertion and extraction permitted
Power-up 3-state
Power-up reset
Multiple V
Back-to-back registers for storage
Separate controls for data flow in each direction
Output capability: +64 mA and 32 mA
Latch-up protection exceeds 500 mA per JEDEC Std 78
ESD protection:
= 25 C; GND = 0 V
MIL STD 883 method 3015: exceeds 2000 V
Machine model: exceeds 200 V
propagation delay nAx to nBx C
propagation delay nAx to nBx C
input capacitance
I/O capacitance
quiescent supply current
Quick reference data
CC
and GND pins minimize switching noise
Conditions
V
V
V
or V
I
O
CC
L
L
outputs 3-state
outputs LOW-state
= 0 V or V
= 50 pF; V
= 50 pF; V
= 0 V or V
CC
= 5.5 V; V
CC
CC
CC
CC
I
= GND
; 3-state
= 5 V
= 5 V
Product data sheet
Min
-
-
-
-
-
-
Typ
2.5
2.2
3
7
0.55
9
Max
-
-
-
-
-
-
Unit
ns
ns
pF
pF
mA
mA

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74abt16543bb Summary of contents

Page 1

Rev. 04 — 26 May 2005 1. General description The 74ABT16543 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The 74ABT16543 16-bit registered ...

Page 2

... Philips Semiconductors 4. Ordering information Table 2: Ordering information Type number Package Temperature range Name 74ABT16543BB + Functional diagram Fig 1. Logic symbol 9397 750 15046 Product data sheet 16-bit latched transceiver with dual enable; 3-state Description QFP52 plastic quad flat package; 52 leads (lead length 1.6 mm) ...

Page 3

Philips Semiconductors Fig 2. IEC logic symbol Fig 3. Logic diagram 9397 750 15046 Product data sheet 16-bit latched transceiver with dual enable; 3-state 46 1EN3 1OEBA 44 G1 1EBA 45 1LEBA 1C5 47 1OEAB 2EN4 49 1EAB G2 48 ...

Page 4

Philips Semiconductors 6. Pinning information 6.1 Pinning Fig 4. Pin configuration QFP52 6.2 Pin description Table 3: Symbol 1A2 1A3 1A4 GND 1A5 1A6 1A7 2A0 2A1 2A2 2A3 2A4 2A5 V CC 2A6 9397 750 15046 Product data sheet ...

Page 5

Philips Semiconductors Table 3: Symbol 2A7 GND 2EAB 2LEAB 2OEAB 2OEBA 2LEBA 2EBA 2B7 2B6 V CC 2B5 2B4 2B3 GND 2B2 2B1 2B0 1B7 1B6 1B5 1B4 1B3 1B2 V CC 1B1 1B0 GND 1EBA 1LEBA 1OEBA 1OEAB 1LEAB ...

Page 6

Philips Semiconductors 7. Functional description 7.1 Function table Table 4: Input nOEAB or nOEBA [ HIGH voltage level HIGH voltage level one set-up time prior to the ...

Page 7

Philips Semiconductors 8. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol ...

Page 8

Philips Semiconductors 10. Static characteristics Table 7: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V) Symbol Parameter amb V input clamp voltage IK V HIGH-level output voltage OH V ...

Page 9

Philips Semiconductors Table 7: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V) Symbol Parameter power-up or power-down PU PD down 3-state output current I 3-state output current OZ I output ...

Page 10

Philips Semiconductors Table 8: Dynamic characteristics GND = 0 V; for test circuit see Figure Symbol Parameter t output disable time PLZ nOEBA to nAx, nOEAB to nBx nEBA to nAx, nEAB to nBx t set-up time HIGH su(H) nAx ...

Page 11

Philips Semiconductors Table 8: Dynamic characteristics GND = 0 V; for test circuit see Figure Symbol Parameter t set-up time LOW su(L) nAx to nLEAB, nBx to nLEBA nAx to nEAB, nBx to nEBA t hold time HIGH h(H) nAx ...

Page 12

Philips Semiconductors Fig 7. 3-state output enable time to HIGH-level and output disable time from HIGH-level Fig 8. 3-state output enable time to LOW-level and output disable time from LOW-level Fig 9. Data set-up and hold times and latch enable ...

Page 13

Philips Semiconductors a. Input pulse definition b. Test circuit Fig 10. Load circuitry for switching times Table 9: Input V I 3.0 V 9397 750 15046 Product data sheet 16-bit latched transceiver with dual enable; 3-state ...

Page 14

Philips Semiconductors 13. Package outline QFP52: plastic quad flat package; 52 leads (lead length 1.6 mm); body pin 1 index DIMENSIONS (mm are ...

Page 15

Philips Semiconductors 14. Revision history Table 10: Revision history Document ID Release date 74ABT16543_4 20050526 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Section ...

Page 16

Philips Semiconductors 15. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 17

Philips Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...

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