74abt648pw NXP Semiconductors, 74abt648pw Datasheet

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74abt648pw

Manufacturer Part Number
74abt648pw
Description
Octal Transceiver/register, Inverting 3-state
Manufacturer
NXP Semiconductors
Datasheet
1.74ABT648PW.pdf (19 pages)
1. General description
2. Features
The 74ABT648 high-performance BiCMOS device combines low static and dynamic
power dissipation with high speed and high output drive.
The 74ABT648 transceiver/register consists of bus transceiver circuits with inverting
3-state outputs, D-type flip-flops, and control circuitry arranged for multiplexed
transmission of data directly from the input bus or the internal registers. Data on the A or B
bus will be clocked into the registers as the appropriate clock pin goes HIGH.
Output enable (OE) and direction (DIR) pins are provided to control the transceiver
function.
In the transceiver mode, data present at the high-impedance port may be stored in either
the A or B register or both.
The select (SAB, SBA) pins determine whether data is stored or transferred through the
device in real time. The DIR determines which bus will receive data when the OE is active
(LOW).
In the isolation mode (OE = HIGH), data from bus A may be stored in the B register and/or
data from bus B may be stored in the A register. Outputs from real time or stored registers
will be inverted. When an output function is disabled, the input function is still enabled and
may be used to store and transmit data. Only one of the two buses A or B may be driven
at a time.
74ABT648
Octal transceiver/register; inverting; 3-state
Rev. 04 — 27 April 2005
Combines 74ABT245 and 74ABT374A type functions in one device
Independent registers for A and B buses
Multiplexed real time and stored data
3-state buffers
Live insertion and extraction permitted
Output capability: +64 mA and 32 mA
Power-up 3-state
Power-up reset
Latch-up protection:
ESD protection:
JESD78: exceeds 500 mA
MIL STD 883 method 3015: exceeds 2000 V
Machine model: exceeds 200 V
Product data sheet

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74abt648pw Summary of contents

Page 1

Octal transceiver/register; inverting; 3-state Rev. 04 — 27 April 2005 1. General description The 74ABT648 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. The 74ABT648 transceiver/register consists of bus transceiver ...

Page 2

... PHL I Ordering information Table 2: Ordering information Type number Package Temperature range 74ABT648D +85 C 74ABT648PW + Functional diagram Fig 1. Logic symbol 9397 750 14858 Product data sheet Quick reference data = 25 C. amb propagation delay ...

Page 3

Philips Semiconductors Fig 3. Logic diagram 9397 750 14858 Product data sheet DIR 23 CPBA 22 SBA 1 CPAB 2 SAB CHANNELS ...

Page 4

Philips Semiconductors 6. Pinning information 6.1 Pinning Fig 4. Pin configuration 6.2 Pin description Table 3: Symbol CPAB SAB DIR GND 9397 750 ...

Page 5

Philips Semiconductors Table 3: Symbol SBA CPBA Functional description 7.1 Function table [1] Table 4: Function table Operating mode Input OE Store Store A, B unspecified X Store B, A unspecified X Store A ...

Page 6

Philips Semiconductors 7.2 Bus management function Real time bus transfer bus B to bus Storage from bus A, bus B or from bus Fig 5. Examples of bus management functions 9397 ...

Page 7

Philips Semiconductors 8. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0V). Symbol ...

Page 8

Philips Semiconductors 10. Static characteristics Table 7: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V input diode voltage IK V HIGH-level output voltage OH V ...

Page 9

Philips Semiconductors Table 7: Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +85 C amb V input diode voltage IK V HIGH-level output voltage OH V ...

Page 10

Philips Semiconductors 11. Dynamic characteristics Table 8: Dynamic characteristics GND = 0 V; for test circuit see Figure 12 Symbol Parameter 5.0 V amb CC t propagation delay PLH CPAB CPBA ...

Page 11

Philips Semiconductors Table 8: Dynamic characteristics GND = 0 V; for test circuit see Figure 12 Symbol Parameter + amb CC t propagation delay PLH CPAB CPBA ...

Page 12

Philips Semiconductors 12. Waveforms Fig 6. Propagation delay clock input to output, clock pulse width and maximum clock Fig 7. Propagation delay and SAB SBA to An Fig 8. Propagation ...

Page 13

Philips Semiconductors Fig 9. Data set-up and hold times Fig 10. 3-state output enable time to HIGH level and disable time from HIGH level Fig 11. 3-state output enable time to LOW level and disable time from LOW level 9397 ...

Page 14

Philips Semiconductors Fig 12. Load circuitry for switching times Table 9: Input V I 3.0 V 9397 750 14858 Product data sheet V I PULSE GENERATOR Test data is given in Table 9. Definitions test circuit Load resistor. ...

Page 15

Philips Semiconductors 13. Package outline SO24: plastic small outline package; 24 leads; body width 7 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT ...

Page 16

Philips Semiconductors TSSOP24: plastic thin shrink small outline package; 24 leads; body width 4 pin 1 index 1 DIMENSIONS (mm are the original dimensions) A UNIT max. 0.15 0.95 mm ...

Page 17

Philips Semiconductors 14. Revision history Table 10: Revision history Document ID Release date 74ABT648_4 20050427 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Section ...

Page 18

Philips Semiconductors 15. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 19

Philips Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...

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