tc7sz07afe TOSHIBA Semiconductor CORPORATION, tc7sz07afe Datasheet - Page 3

• Manufacturer Part Number: tc7sz07afe
• Description: Gates Cmos Digital Integrated Circuit Silicon Monolithic Non-inverter Open Drain
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
DC Characteristics
Input voltage
Z-state output leakage current
Output voltage
Input leakage current
Power off leakage current
Quiescent supply current
Characteristics
High level
Low level
Low level
Symbol
I LKG
I
V
V
OFF
I
V
I
CC
IN
OL
IH
IL
V IN = V IH
V OUT = 0~5.5 V
V
V
V
V
IN
IN
IN
IN
= V
= 5.5 V or GND
or V
= 5.5 V or GND
Test Condition
IL
OUT
⎯
⎯
I
I
I
I
I
OL
OL
OL
OL
OL
= 5.5 V
= 100 µA
= 8 mA
= 16 mA
= 24 mA
= 32 mA
3
1.65~1.95
1.65~1.95
1.65~5.5
V
2.3~5.5
2.3~5.5
0~5.5
CC
1.65
2.3
3.0
4.5
2.3
3.0
3.0
4.5
0.0
5.5
(V)
0.75 ×
0.7 ×
V
V
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
CC
CC
Ta = 25°C
Typ.
0.15
0.22
0.22
0.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
0
0
0
0.25 ×
0.3 ×
Max
V
V
0.55
0.55
0.1
0.1
0.1
0.1
0.3
0.4
⎯
⎯
±5
±1
CC
CC
1
2
Ta = −40~85°C
0.75 ×
0.7 ×
V
V
Min
TC7SZ07AFE
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
CC
CC
2006-02-09
0.25 ×
0.3 ×
V
V
0.55
0.55
Max
±10
±10
0.1
0.1
0.1
0.1
0.3
0.4
10
20
⎯
⎯
CC
CC
Unit
µA
µA
µA
µA
V
V