at28bv256 ATMEL Corporation, at28bv256 Datasheet

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at28bv256

Manufacturer Part Number
at28bv256
Description
256k 32k X 8 Battery-voltage Parallel Eeproms
Manufacturer
ATMEL Corporation
Datasheet

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Features
1. Description
The AT28BV256 is a high-performance electrically erasable and programmable read-
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access
times to 200 ns with power dissipation of just 54 mW. When the device is deselected,
the CMOS standby current is less than 200 µA.
The AT28BV256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by Data polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28BV256 has additional features to ensure high quality and manufactura-
bility. The device utilizes internal error correction for extended endurance and
improved data retention characteristics. An optional software data protection mecha-
nism is available to guard against inadvertent writes. The device also includes an
extra 64 bytes of EEPROM for device identification or tracking.
Single 2.7V - 3.6V Supply
Fast Read Access Time – 200 ns
Automatic Page Write Operation
Fast Write Cycle Times
Low Power Dissipation
Hardware and Software Data Protection
Data Polling for End of Write Detection
High Reliability CMOS Technology
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
– Page Write Cycle Time: 10 ms Maximum
– 1- to 64-byte Page Write Operation
– 15 mA Active Current
– 20 µA CMOS Standby Current
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
256K (32K x 8)
Battery-Voltage
Parallel
EEPROMs
AT28BV256
0273J–PEEPR–10/06

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at28bv256 Summary of contents

Page 1

... When the device is deselected, the CMOS standby current is less than 200 µA. The AT28BV256 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing bytes simultaneously ...

Page 2

... PLCC – Top View I/O0 13 Note: 1. PLCC package pins 1 and 17 are Don’t Connect. AT28BV256 2 2.2 28-lead PDIP, SOIC – Top View 2.3 28-lead TSOP – Top View OE A11 A13 27 A11 WE VCC 26 NC ...

Page 3

... Maximum Ratings” may cause permanent dam- age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect + 0.6V device reliability CC AT28BV256 3 ...

Page 4

... Read The AT28BV256 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state when either high. This dual-line control gives designers flexibility in preventing bus contention in their system ...

Page 5

... SDP can prevent inadvertent writes during power-up and power-down as well as any other potential periods of system instability. The AT28BV256 can only be written using the software data protection feature. A series of three write commands to specific addresses with specific data must be presented to the device before writing in the byte or page mode ...

Page 6

... IH ( Condition I 0. MHz OUT -100 µA OH AT28BV256-20 -40°C - 85°C 2.7V - 3. OUT High High Z V High Z IL Min Max Units 10 µA 10 µA 50 µ ...

Page 7

... This parameter is characterized and is not 100% tested. 0273J–PEEPR–10/06 (1)(2)(3)( ACC - t after the address transition without impact on t ACC after the falling edge of CE without impact pF). L AT28BV256 AT28BV256-20 Min Max Units 200 ns 200 ...

Page 8

... Input Test Waveforms and Measurement Level 12. Output Test Load 13. Pin Capacitance ( MHz 25°C Symbol Typ OUT Note: 1. This parameter is characterized and is not 100% tested. AT28BV256 < Max 6 12 Units Conditions OUT ...

Page 9

... AC Write Waveforms 15.1 WE Controlled 15.2 CE Controlled 0273J–PEEPR–10/06 t OES t OEH OES OEH AT28BV256 Min Max 200 WPH WPH t DH Units ...

Page 10

... A0 - A14 must conform to the addressing sequence for the first three bytes as shown above through A14 must specify the same page address during each high to low transition of WE (or CE) after the software code has been entered must be high only when WE and CE are both low. AT28BV256 10 (1)(2)(3) LOAD DATA AA ...

Page 11

... Toggling either both OE and CE will operate toggle bit. 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. 0273J–PEEPR–10/06 ( OEH OEH AT28BV256 Min Typ Max Min Typ Max 10 10 150 ...

Page 12

... Normalized I Graphs CC AT28BV256 12 0273J–PEEPR–10/06 ...

Page 13

... Wide, Plastic Gull Wing Small Outline (SOIC) 28T 28-lead, Plastic Thin Small Outline Package (TSOP) 0273J–PEEPR–10/06 Ordering Code AT28BV256-20JI AT28BV256-20PI AT28BV256-20SI AT28BV256-20TI Ordering Code AT28BV256-20JU AT28BV256-20TU AT28BV256-20SU AT28BV256-20PU Package and Temperature Combinations JI, PI, SI, TI, TU, JU, SU, PU Package Type AT28BV256 Package Operation Range 32J 28P6 ...

Page 14

... Allowable protrusion is .010"(0.254 mm) per side. Dimension D1 and E1 include mold mismatch and are measured at the extreme material condition at the upper or lower parting line. 3. Lead coplanarity is 0.004" (0.102 mm) maximum. 2325 Orchard Parkway San Jose, CA 95131 R AT28BV256 14 1.14(0.045) X 45˚ PIN NO. 1 IDENTIFIER E1 E ...

Page 15

... Mold Flash or Protrusion shall not exceed 0.25 mm (0.010"). 2325 Orchard Parkway San Jose, CA 95131 R 0273J–PEEPR–10/06 D PIN 0º ~ 15º REF eB TITLE 28P6, 28-lead (0.600"/15.24 mm Wide) Plastic Dual Inline Package (PDIP) AT28BV256 E1 A1 COMMON DIMENSIONS (Unit of Measure = mm) MIN SYMBOL NOM A – – A1 0.381 – D 36.703 – ...

Page 16

... SOIC Dimensions in Millimeters and (Inches). Controlling dimension: Millimeters. 2325 Orchard Parkway San Jose, CA 95131 R AT28BV256 16 0.51(0.020) 0.33(0.013) 7.60(0.2992) 7.40(0.2914) PIN 1 1.27(0.50) BSC TOP VIEW 18.10(0.7125) 17.70(0.6969) 0.30(0.0118) 0.10(0.0040) 0º ~ 8º 1.27(0.050) 0.40(0.016) TITLE 28S, 28-lead, 0.300" Body, Plastic Gull Wing Small Outline (SOIC) JEDEC Standard MS-013 10 ...

Page 17

... Orchard Parkway San Jose, CA 95131 R 0273J–PEEPR–10/06 PIN SEATING PLANE A1 TITLE 28T, 28-lead (8 x 13.4 mm) Plastic Thin Small Outline Package, Type I (TSOP) AT28BV256 0º ~ 5º GAGE PLANE COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN NOM MAX A – ...

Page 18

... Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life. © 2006 Atmel Corporation. All rights reserved. Atmel marks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. Atmel Operations Memory ...

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